The use of nitrogen to disorder GaInP

D. C. Chapman, L. W. Rieth, G. B. Stringfellow, J. W. Lee, T. Y. Seong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The use of the surfactant N in the growth of GaInP, to cause a reduction in CuPt ordering, was discussed. It was found that the reduction in order parameter was due to a change of the surface thermodynamics. A decrease in the P dimer concentration was observed by adding N to the surface. The reduction of P dimer concentration on the surface reduced the driving force for ordering and thus reduced the amount of CuPt order in GaInP. Through gas phase parasitic reactions, nitrogen also reduced the In content in the epilayer.

Original languageEnglish
Pages (from-to)6145-6151
Number of pages7
JournalJournal of Applied Physics
Volume95
Issue number11 I
DOIs
Publication statusPublished - 2004 Jun 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Chapman, D. C., Rieth, L. W., Stringfellow, G. B., Lee, J. W., & Seong, T. Y. (2004). The use of nitrogen to disorder GaInP. Journal of Applied Physics, 95(11 I), 6145-6151. https://doi.org/10.1063/1.1715139