The vertically stacked organic sensor-transistor on a flexible substrate

Shin Woo Jeong, Jin Wook Jeong, Seongpil Chang, Seung Youl Kang, Kyoung Ik Cho, Byeong Kwon Ju

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Abstract

The authors report on the photo-response characteristics of flexible sensor-transistor circuits (ST-circuits) made with (poly(3-hexylethiophene)/ phenyl-C61 -butryic acid methyl ester) (P3HT/PCBM) bulk heterojunction polymer and pentacene-based organic field-effect transistors, which are stacked via poly(dimethylsiloxane) (PDMS) on the plastic substrate. The results indicate that the anode-source current is variable because of both the charge separation of the photogenerated excitons and the accumulated charges at the OFET channel layer. The light dependent photo response (ΔI/ I 0) is modulated from 0.47 to 1.9 by the gate-source voltage at the fixed anode-source voltage of the ST-circuits.

Original languageEnglish
Article number253309
JournalApplied Physics Letters
Volume97
Issue number25
DOIs
Publication statusPublished - 2010 Dec 20

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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