The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

Jae Ho Won, Kihyun Kim, Jong Hee Suh, Shin Hang Cho, Pyong Kon Cho, Jin Ki Hong, Sun Ung Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm2/R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively.

Original languageEnglish
Pages (from-to)206-208
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume591
Issue number1
DOIs
Publication statusPublished - 2008 Jun 11

Fingerprint

Thick films
thick films
Detectors
X rays
detectors
x rays
Carrier transport
Charge carriers
Film thickness
charge carriers
film thickness
Photons
Electric fields
electric fields
photons
energy

Keywords

  • Charge carrier transport
  • Polycrystalline CdZnTe thick films
  • X-ray sensitivity

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films. / Won, Jae Ho; Kim, Kihyun; Suh, Jong Hee; Cho, Shin Hang; Cho, Pyong Kon; Hong, Jin Ki; Kim, Sun Ung.

In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 591, No. 1, 11.06.2008, p. 206-208.

Research output: Contribution to journalArticle

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