Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions

Jaewoo Shim, Gwangwe Yoo, Dong Ho Kang, Woo Shik Jung, Young Chul Byun, Hyoungsub Kim, Won Tae Kang, Woo Jong Yu, Hyun-Yong Yu, Yongkook Park, Jin Hong Park

Research output: Contribution to journalArticle

2 Citations (Scopus)


Here, we theoretically and experimentally investigate the impact of a high-κ layer inserted between graphene and p-Si in a graphene/Si junction. We have achieved 86-fold and 222-fold reductions in a specific contact resistivity (ρc) by inserting 1-nm-thick Al2O3 and 2-nm-thick TiO2 in the graphene-semiconductor junction, respectively, corresponding to lowering the effective barrier height by 0.24 and 0.12 eV. Furthermore, we propose a graphene-induced gap state model that simultaneously considers the graphene's modulation by a gate bias and the effect of the high-κ insertion.

Original languageEnglish
Article number7317745
Pages (from-to)4-7
Number of pages4
JournalIEEE Electron Device Letters
Issue number1
Publication statusPublished - 2016 Jan 1


  • graphene
  • GS junction
  • high-κ
  • Schottky

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Shim, J., Yoo, G., Kang, D. H., Jung, W. S., Byun, Y. C., Kim, H., Kang, W. T., Yu, W. J., Yu, H-Y., Park, Y., & Park, J. H. (2016). Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions. IEEE Electron Device Letters, 37(1), 4-7. [7317745].