Theoretical and experimental study on junction temperature of packaged Fabry-Perot laser diode

Jae Ho Han, S. W. Park

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Characterization of laser diode at high temperature for the issue of long-term reliability to detect and screen the initial failures originated from internal stress and optical instability is performed. Estimation of junction temperature of 1.55 μm Fabry-Perot laser diode was theoretically approached by using thermal resistance of materials regarding the heat path from analytically modeling laser diode. Under the condition of burn-in test, experiments measuring the junction temperature with current injection at controlled temperature verify the result compared to that of analysis.

Original languageEnglish
Pages (from-to)292-294
Number of pages3
JournalIEEE Transactions on Device and Materials Reliability
Volume4
Issue number2
DOIs
Publication statusPublished - 2004 Jun 1
Externally publishedYes

Fingerprint

Semiconductor lasers
Temperature
Heat resistance
Residual stresses
Experiments

Keywords

  • Laser reliability
  • Laser thermal factors
  • Semiconductor device packaging
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Theoretical and experimental study on junction temperature of packaged Fabry-Perot laser diode. / Han, Jae Ho; Park, S. W.

In: IEEE Transactions on Device and Materials Reliability, Vol. 4, No. 2, 01.06.2004, p. 292-294.

Research output: Contribution to journalArticle

@article{e2a468907ffd4dbba5b130ffc762793f,
title = "Theoretical and experimental study on junction temperature of packaged Fabry-Perot laser diode",
abstract = "Characterization of laser diode at high temperature for the issue of long-term reliability to detect and screen the initial failures originated from internal stress and optical instability is performed. Estimation of junction temperature of 1.55 μm Fabry-Perot laser diode was theoretically approached by using thermal resistance of materials regarding the heat path from analytically modeling laser diode. Under the condition of burn-in test, experiments measuring the junction temperature with current injection at controlled temperature verify the result compared to that of analysis.",
keywords = "Laser reliability, Laser thermal factors, Semiconductor device packaging, Semiconductor lasers",
author = "Han, {Jae Ho} and Park, {S. W.}",
year = "2004",
month = "6",
day = "1",
doi = "10.1109/TDMR.2004.827834",
language = "English",
volume = "4",
pages = "292--294",
journal = "IEEE Transactions on Device and Materials Reliability",
issn = "1530-4388",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Theoretical and experimental study on junction temperature of packaged Fabry-Perot laser diode

AU - Han, Jae Ho

AU - Park, S. W.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - Characterization of laser diode at high temperature for the issue of long-term reliability to detect and screen the initial failures originated from internal stress and optical instability is performed. Estimation of junction temperature of 1.55 μm Fabry-Perot laser diode was theoretically approached by using thermal resistance of materials regarding the heat path from analytically modeling laser diode. Under the condition of burn-in test, experiments measuring the junction temperature with current injection at controlled temperature verify the result compared to that of analysis.

AB - Characterization of laser diode at high temperature for the issue of long-term reliability to detect and screen the initial failures originated from internal stress and optical instability is performed. Estimation of junction temperature of 1.55 μm Fabry-Perot laser diode was theoretically approached by using thermal resistance of materials regarding the heat path from analytically modeling laser diode. Under the condition of burn-in test, experiments measuring the junction temperature with current injection at controlled temperature verify the result compared to that of analysis.

KW - Laser reliability

KW - Laser thermal factors

KW - Semiconductor device packaging

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=4043115574&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4043115574&partnerID=8YFLogxK

U2 - 10.1109/TDMR.2004.827834

DO - 10.1109/TDMR.2004.827834

M3 - Article

AN - SCOPUS:4043115574

VL - 4

SP - 292

EP - 294

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

SN - 1530-4388

IS - 2

ER -