Thermal and electrical stability behavior of a magnetic tunnel junction with a new Zr-alloyed Al-oxide barrier

Chul Min Choi, Seong Rae Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The thermal and electrical stability of a magnetic tunnel junction (MTJ) with a Zr-alloyed Al-oxide (ZrAl-oxide) tunnel barrier were investigated. A significant tunneling magnetic resistance (TMR) value of 10% was maintained in the MTJ with a ZrAl-oxide barrier (9.89 at.% Zr) annealed at 450°C. The break-down voltage of 1.75 V was highest for the MTJ with a 9.89 at.% Zr-alloyed Al-oxide barrier. The quality of the barrier material microstructure in the pre-oxidation state had a dominant effect on the thermal and electrical stability of the MTJ. In addition, plasma oxidation of an ultra-thin 0.6-nm-thiek ZrAl barrier led to an MTJ with 8% TMR and a junction resistance × area (RA) of 0.72 MΩμm 2.

Original languageEnglish
Pages (from-to)2281-2283
Number of pages3
JournalIEEE Transactions on Magnetics
Volume40
Issue number4 II
DOIs
Publication statusPublished - 2004 Jul 1

Fingerprint

Tunnel junctions
tunnel junctions
Oxides
thermal stability
oxides
Oxidation
oxidation
Electric breakdown
tunnels
Tunnels
breakdown
Hot Temperature
Plasmas
microstructure
Microstructure
electric potential

Keywords

  • Amorphous Zr-alloyed Al-oxide barrier
  • Magnetic tunnel junction
  • Thermal and electrical stability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Thermal and electrical stability behavior of a magnetic tunnel junction with a new Zr-alloyed Al-oxide barrier. / Choi, Chul Min; Lee, Seong Rae.

In: IEEE Transactions on Magnetics, Vol. 40, No. 4 II, 01.07.2004, p. 2281-2283.

Research output: Contribution to journalArticle

@article{af99646f7e70474fa05aa59cdee6d4d1,
title = "Thermal and electrical stability behavior of a magnetic tunnel junction with a new Zr-alloyed Al-oxide barrier",
abstract = "The thermal and electrical stability of a magnetic tunnel junction (MTJ) with a Zr-alloyed Al-oxide (ZrAl-oxide) tunnel barrier were investigated. A significant tunneling magnetic resistance (TMR) value of 10{\%} was maintained in the MTJ with a ZrAl-oxide barrier (9.89 at.{\%} Zr) annealed at 450°C. The break-down voltage of 1.75 V was highest for the MTJ with a 9.89 at.{\%} Zr-alloyed Al-oxide barrier. The quality of the barrier material microstructure in the pre-oxidation state had a dominant effect on the thermal and electrical stability of the MTJ. In addition, plasma oxidation of an ultra-thin 0.6-nm-thiek ZrAl barrier led to an MTJ with 8{\%} TMR and a junction resistance × area (RA) of 0.72 MΩμm 2.",
keywords = "Amorphous Zr-alloyed Al-oxide barrier, Magnetic tunnel junction, Thermal and electrical stability",
author = "Choi, {Chul Min} and Lee, {Seong Rae}",
year = "2004",
month = "7",
day = "1",
doi = "10.1109/TMAG.2004.830216",
language = "English",
volume = "40",
pages = "2281--2283",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4 II",

}

TY - JOUR

T1 - Thermal and electrical stability behavior of a magnetic tunnel junction with a new Zr-alloyed Al-oxide barrier

AU - Choi, Chul Min

AU - Lee, Seong Rae

PY - 2004/7/1

Y1 - 2004/7/1

N2 - The thermal and electrical stability of a magnetic tunnel junction (MTJ) with a Zr-alloyed Al-oxide (ZrAl-oxide) tunnel barrier were investigated. A significant tunneling magnetic resistance (TMR) value of 10% was maintained in the MTJ with a ZrAl-oxide barrier (9.89 at.% Zr) annealed at 450°C. The break-down voltage of 1.75 V was highest for the MTJ with a 9.89 at.% Zr-alloyed Al-oxide barrier. The quality of the barrier material microstructure in the pre-oxidation state had a dominant effect on the thermal and electrical stability of the MTJ. In addition, plasma oxidation of an ultra-thin 0.6-nm-thiek ZrAl barrier led to an MTJ with 8% TMR and a junction resistance × area (RA) of 0.72 MΩμm 2.

AB - The thermal and electrical stability of a magnetic tunnel junction (MTJ) with a Zr-alloyed Al-oxide (ZrAl-oxide) tunnel barrier were investigated. A significant tunneling magnetic resistance (TMR) value of 10% was maintained in the MTJ with a ZrAl-oxide barrier (9.89 at.% Zr) annealed at 450°C. The break-down voltage of 1.75 V was highest for the MTJ with a 9.89 at.% Zr-alloyed Al-oxide barrier. The quality of the barrier material microstructure in the pre-oxidation state had a dominant effect on the thermal and electrical stability of the MTJ. In addition, plasma oxidation of an ultra-thin 0.6-nm-thiek ZrAl barrier led to an MTJ with 8% TMR and a junction resistance × area (RA) of 0.72 MΩμm 2.

KW - Amorphous Zr-alloyed Al-oxide barrier

KW - Magnetic tunnel junction

KW - Thermal and electrical stability

UR - http://www.scopus.com/inward/record.url?scp=4444329557&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4444329557&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2004.830216

DO - 10.1109/TMAG.2004.830216

M3 - Article

AN - SCOPUS:4444329557

VL - 40

SP - 2281

EP - 2283

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 4 II

ER -