The thermal and electrical stability of a magnetic tunnel junction (MTJ) with a Zr-alloyed Al-oxide (ZrAl-oxide) tunnel barrier were investigated. A significant tunneling magnetic resistance (TMR) value of 10% was maintained in the MTJ with a ZrAl-oxide barrier (9.89 at.% Zr) annealed at 450°C. The break-down voltage of 1.75 V was highest for the MTJ with a 9.89 at.% Zr-alloyed Al-oxide barrier. The quality of the barrier material microstructure in the pre-oxidation state had a dominant effect on the thermal and electrical stability of the MTJ. In addition, plasma oxidation of an ultra-thin 0.6-nm-thiek ZrAl barrier led to an MTJ with 8% TMR and a junction resistance × area (RA) of 0.72 MΩμm2.
- Amorphous Zr-alloyed Al-oxide barrier
- Magnetic tunnel junction
- Thermal and electrical stability
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering