Thermal and electrical stability behavior of a magnetic tunnel junction with a new Zr-alloyed Al-oxide barrier

Chul Min Choi, Seong Rae Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The thermal and electrical stability of a magnetic tunnel junction (MTJ) with a Zr-alloyed Al-oxide (ZrAl-oxide) tunnel barrier were investigated. A significant tunneling magnetic resistance (TMR) value of 10% was maintained in the MTJ with a ZrAl-oxide barrier (9.89 at.% Zr) annealed at 450°C. The break-down voltage of 1.75 V was highest for the MTJ with a 9.89 at.% Zr-alloyed Al-oxide barrier. The quality of the barrier material microstructure in the pre-oxidation state had a dominant effect on the thermal and electrical stability of the MTJ. In addition, plasma oxidation of an ultra-thin 0.6-nm-thiek ZrAl barrier led to an MTJ with 8% TMR and a junction resistance × area (RA) of 0.72 MΩμm2.

Original languageEnglish
Pages (from-to)2281-2283
Number of pages3
JournalIEEE Transactions on Magnetics
Volume40
Issue number4 II
DOIs
Publication statusPublished - 2004 Jul

Keywords

  • Amorphous Zr-alloyed Al-oxide barrier
  • Magnetic tunnel junction
  • Thermal and electrical stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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