Thermal and Mn Diffusion Behaviors of CoNbZr-Based Spin Valves with Nano Oxide Layers

Research output: Contribution to journalArticle

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Abstract

The authors investigated the specularity and thermal characteristics of CoNbZr-based spin valves (SVs) with and without employing nano oxide layers (NOL). Both CoNbZr- and Ta-based SV films composed of Si-SiO2-CoNbZr (or Ta)-CoFe-NOL-CoFe-Cu-CoFe-IrMn-CoNbZr (or Ta) were prepared by rf magnetron sputtering. Magnetoresistance (MR) ratios in the as-deposited state increased 48% (3.4% → 5.0%) with incorporation of NOL. In particular, a remarkable enhancement (about 95%) in the MR ratio after annealing at 300 °C for 20 min was observed (5.0% → 9.8%). According to the auger electron spectroscopy depth profile, the large increase of the MR ratios in the initial stage of annealing were due to the double specular scattering effects by the Mn-oxides at the surface and the NOL in the free layer. Due to high affinity of Mn for oxygen, Mn diffused preferentially to the position of high oxygen potential (such as the surface or the NOL) during prolonged annealing. The authors could artificially control the diffusion direction of Mn by providing an oxygen potential (like inserting NOL) in the SV structure.

Original languageEnglish
Pages (from-to)2824-2826
Number of pages3
JournalIEEE Transactions on Magnetics
Volume39
Issue number5 II
DOIs
Publication statusPublished - 2003 Sep 1

Fingerprint

thermal diffusion
Oxides
oxides
Magnetoresistance
Annealing
Oxygen
annealing
oxygen
Auger electron spectroscopy
Hot Temperature
Magnetron sputtering
Auger spectroscopy
electron spectroscopy
affinity
magnetron sputtering
Scattering
augmentation
profiles
scattering

Keywords

  • Amorphous CoNbZr spin valves
  • Mn diffusion
  • Nano oxide layer
  • Specular scattering
  • Thermal stability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Thermal and Mn Diffusion Behaviors of CoNbZr-Based Spin Valves with Nano Oxide Layers. / Kim, Jong Soo; Kim, Young-geun; Lee, Seong Rae.

In: IEEE Transactions on Magnetics, Vol. 39, No. 5 II, 01.09.2003, p. 2824-2826.

Research output: Contribution to journalArticle

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