Thermal modeling of Graphene layer on the peak channel temperature of AlGaNGaN high electron mobility transistors

Geunwoo Ko, Jihyun Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report that the deposition of graphene as a heat spreading layer on AlGaNGaN /sapphire high electron mobility transistors (HEMT) can lower the temperature of localized hot spots, which can reach as high as 300°C. As the number of gate fingers increased, the peak channel temperature also increased. From our simulation, graphene was shown to be extremely effective in distributing the localized heat in both SiC and sapphire substrates. The reliability of AlGaNGaN HEMT can be remarkably improved by using a graphene layer because it can act as a heat-spreading layer and lower the temperature of localized hot spots, which are known to limit device performance and activate the formation of defects.

Original languageEnglish
Pages (from-to)H29-H31
JournalElectrochemical and Solid-State Letters
Volume12
Issue number2
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Thermal modeling of Graphene layer on the peak channel temperature of AlGaNGaN high electron mobility transistors'. Together they form a unique fingerprint.

  • Cite this