Thermal simulations of high power, bulk GaN rectifiers

R. Mehandru, S. Kim, Ji Hyun Kim, F. Ren, J. R. Lothian, S. J. Pearton, S. S. Park, Y. J. Park

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A finite element simulation was used to quantitatively estimate the effectiveness of flip-chip bonding in the temperature rise of bulk GaN Schottky rectifiers under various conditions of current density, duty cycle, forward turn-on voltage and on-state resistance. The temperature difference between flip-chip bonded devices and bottom bonded devices was 20 °C even at modest current densities. The maximum temperature in the bulk cases occurred in the center of the GaN substrate thickness. The transit time of the temperature reaching the steady state for the flip-chip bonding device is in the range of millisecond, which is faster than that of most power switch applications. Flip-chip bonding is suggested to improve the heat dissipation of high power, bulk GaN rectifiers.

Original languageEnglish
Pages (from-to)1037-1043
Number of pages7
JournalSolid-State Electronics
Volume47
Issue number6
DOIs
Publication statusPublished - 2003 Jun 1
Externally publishedYes

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Keywords

  • Bulk GaN rectifiers
  • High power rectifiers
  • Temperature rise in GaN diodes
  • Thermal simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Mehandru, R., Kim, S., Kim, J. H., Ren, F., Lothian, J. R., Pearton, S. J., ... Park, Y. J. (2003). Thermal simulations of high power, bulk GaN rectifiers. Solid-State Electronics, 47(6), 1037-1043. https://doi.org/10.1016/S0038-1101(02)00481-1