Thermal stability of a nanostructured trilayer synthetic antiferromagnet

J. K. Han, K. H. Shin, Sang Ho Lim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Thermal stability of a nanostructured trilayer synthetic antiferromagnet is investigated in the Worledge model. No or minimal shape anisotropy effect is predicted from the model due to the simplifying assumption that the self-demagnetizing field is equal to the dipole field. A slight relaxation of the assumption causes a large impact on the thermal stability. In the case that the dipole field is 90% of the demagnetizing field, the energy barrier to spin flop is doubled to 80 kT in a typical ellipsoid cell (212×106 nm2) for high density magnetic random access memory. The thermal stability of half-selected cells in the writing scheme based on the spin flop is also improved by relaxing the assumption over the applied field range relevant to magnetic random access memory applications.

Original languageEnglish
Article number09F506
JournalJournal of Applied Physics
Volume101
Issue number9
DOIs
Publication statusPublished - 2007 May 21

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thermal stability
random access memory
dipoles
ellipsoids
cells
anisotropy
causes
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Thermal stability of a nanostructured trilayer synthetic antiferromagnet. / Han, J. K.; Shin, K. H.; Lim, Sang Ho.

In: Journal of Applied Physics, Vol. 101, No. 9, 09F506, 21.05.2007.

Research output: Contribution to journalArticle

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