Abstract
The thermal stability of palladium (Pd) supported on single crystalline SiO 2 thin films was investigated. Auger electron spectroscopy (AES) and scanning tunneling microscopy were used to determine the effect of annealing temperature on the model Pd/SiO 2 catalyst. It was observed that the Pd clusters on the SiO 2 thin films were unaltered with respect to size or shape upon heating to 700 K, but interdiffusion and sintering of the Pd clusters occured between 750 and 1050 K. Desorption of Pd was found to take place concomitantly with the deposition of SiO 2 at temperatures above 1050 K.
| Original language | English |
|---|---|
| Pages (from-to) | 2319-2323 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 21 |
| Issue number | 6 |
| Publication status | Published - 2003 Nov |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Min, B. K., Santra, A. K., & Goodman, D. W. (2003). Thermal stability of Pd supported on single crystalline SiO 2 thin films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(6), 2319-2323.