Thermal stability of Pd supported on single crystalline SiO 2 thin films

Byoung Koun Min, A. K. Santra, D. W. Goodman

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The thermal stability of palladium (Pd) supported on single crystalline SiO 2 thin films was investigated. Auger electron spectroscopy (AES) and scanning tunneling microscopy were used to determine the effect of annealing temperature on the model Pd/SiO 2 catalyst. It was observed that the Pd clusters on the SiO 2 thin films were unaltered with respect to size or shape upon heating to 700 K, but interdiffusion and sintering of the Pd clusters occured between 750 and 1050 K. Desorption of Pd was found to take place concomitantly with the deposition of SiO 2 at temperatures above 1050 K.

Original languageEnglish
Pages (from-to)2319-2323
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number6
Publication statusPublished - 2003 Nov 1
Externally publishedYes

Fingerprint

Palladium
palladium
Thermodynamic stability
thermal stability
Crystalline materials
Thin films
thin films
Scanning tunneling microscopy
Auger electron spectroscopy
Auger spectroscopy
electron spectroscopy
scanning tunneling microscopy
Desorption
sintering
Sintering
desorption
Annealing
Heating
catalysts
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Thermal stability of Pd supported on single crystalline SiO 2 thin films. / Min, Byoung Koun; Santra, A. K.; Goodman, D. W.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6, 01.11.2003, p. 2319-2323.

Research output: Contribution to journalArticle

@article{b69c69b5db6e41398c341ac2b2d56ea4,
title = "Thermal stability of Pd supported on single crystalline SiO 2 thin films",
abstract = "The thermal stability of palladium (Pd) supported on single crystalline SiO 2 thin films was investigated. Auger electron spectroscopy (AES) and scanning tunneling microscopy were used to determine the effect of annealing temperature on the model Pd/SiO 2 catalyst. It was observed that the Pd clusters on the SiO 2 thin films were unaltered with respect to size or shape upon heating to 700 K, but interdiffusion and sintering of the Pd clusters occured between 750 and 1050 K. Desorption of Pd was found to take place concomitantly with the deposition of SiO 2 at temperatures above 1050 K.",
author = "Min, {Byoung Koun} and Santra, {A. K.} and Goodman, {D. W.}",
year = "2003",
month = "11",
day = "1",
language = "English",
volume = "21",
pages = "2319--2323",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Thermal stability of Pd supported on single crystalline SiO 2 thin films

AU - Min, Byoung Koun

AU - Santra, A. K.

AU - Goodman, D. W.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - The thermal stability of palladium (Pd) supported on single crystalline SiO 2 thin films was investigated. Auger electron spectroscopy (AES) and scanning tunneling microscopy were used to determine the effect of annealing temperature on the model Pd/SiO 2 catalyst. It was observed that the Pd clusters on the SiO 2 thin films were unaltered with respect to size or shape upon heating to 700 K, but interdiffusion and sintering of the Pd clusters occured between 750 and 1050 K. Desorption of Pd was found to take place concomitantly with the deposition of SiO 2 at temperatures above 1050 K.

AB - The thermal stability of palladium (Pd) supported on single crystalline SiO 2 thin films was investigated. Auger electron spectroscopy (AES) and scanning tunneling microscopy were used to determine the effect of annealing temperature on the model Pd/SiO 2 catalyst. It was observed that the Pd clusters on the SiO 2 thin films were unaltered with respect to size or shape upon heating to 700 K, but interdiffusion and sintering of the Pd clusters occured between 750 and 1050 K. Desorption of Pd was found to take place concomitantly with the deposition of SiO 2 at temperatures above 1050 K.

UR - http://www.scopus.com/inward/record.url?scp=0942278348&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0942278348&partnerID=8YFLogxK

M3 - Article

VL - 21

SP - 2319

EP - 2323

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 6

ER -