Thermal stability of Pd supported on single crystalline SiO 2 thin films

B. K. Min; A. K. Santra; D. W. Goodman

Thermal stability of Pd supported on single crystalline SiO ₂ thin films

B. K. Min, A. K. Santra, D. W. Goodman

Research output: Contribution to journal › Article › peer-review

Abstract

The thermal stability of palladium (Pd) supported on single crystalline SiO ₂ thin films was investigated. Auger electron spectroscopy (AES) and scanning tunneling microscopy were used to determine the effect of annealing temperature on the model Pd/SiO ₂ catalyst. It was observed that the Pd clusters on the SiO ₂ thin films were unaltered with respect to size or shape upon heating to 700 K, but interdiffusion and sintering of the Pd clusters occured between 750 and 1050 K. Desorption of Pd was found to take place concomitantly with the deposition of SiO ₂ at temperatures above 1050 K.

Original language	English
Pages (from-to)	2319-2323
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	6
Publication status	Published - 2003 Nov
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "The thermal stability of palladium (Pd) supported on single crystalline SiO 2 thin films was investigated. Auger electron spectroscopy (AES) and scanning tunneling microscopy were used to determine the effect of annealing temperature on the model Pd/SiO 2 catalyst. It was observed that the Pd clusters on the SiO 2 thin films were unaltered with respect to size or shape upon heating to 700 K, but interdiffusion and sintering of the Pd clusters occured between 750 and 1050 K. Desorption of Pd was found to take place concomitantly with the deposition of SiO 2 at temperatures above 1050 K.",

author = "Min, {B. K.} and Santra, {A. K.} and Goodman, {D. W.}",

year = "2003",

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AU - Min, B. K.

AU - Santra, A. K.

AU - Goodman, D. W.

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N2 - The thermal stability of palladium (Pd) supported on single crystalline SiO 2 thin films was investigated. Auger electron spectroscopy (AES) and scanning tunneling microscopy were used to determine the effect of annealing temperature on the model Pd/SiO 2 catalyst. It was observed that the Pd clusters on the SiO 2 thin films were unaltered with respect to size or shape upon heating to 700 K, but interdiffusion and sintering of the Pd clusters occured between 750 and 1050 K. Desorption of Pd was found to take place concomitantly with the deposition of SiO 2 at temperatures above 1050 K.

AB - The thermal stability of palladium (Pd) supported on single crystalline SiO 2 thin films was investigated. Auger electron spectroscopy (AES) and scanning tunneling microscopy were used to determine the effect of annealing temperature on the model Pd/SiO 2 catalyst. It was observed that the Pd clusters on the SiO 2 thin films were unaltered with respect to size or shape upon heating to 700 K, but interdiffusion and sintering of the Pd clusters occured between 750 and 1050 K. Desorption of Pd was found to take place concomitantly with the deposition of SiO 2 at temperatures above 1050 K.

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