Thermal stability of WSix and W Schottky contacts on n-GaN

Jihyun Kim, F. Ren, A. G. Baca, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

The thermal stability of sputter-deposited W and WSix Schottky contacts on n-type GaN was reported. The barrier height was low for both W and WSix and the reverse current were larger than predicted from thermionic emission transport for both types of contacts. The results showed that the WSix was stable for anneals up to 600°C.

Original languageEnglish
Pages (from-to)3263-3265
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number19
DOIs
Publication statusPublished - 2003 May 12
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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