Thermal stability of WSix and W Schottky contacts on n-GaN

Ji Hyun Kim, F. Ren, A. G. Baca, S. J. Pearton

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The thermal stability of sputter-deposited W and WSix Schottky contacts on n-type GaN was reported. The barrier height was low for both W and WSix and the reverse current were larger than predicted from thermionic emission transport for both types of contacts. The results showed that the WSix was stable for anneals up to 600°C.

Original languageEnglish
Pages (from-to)3263-3265
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number19
DOIs
Publication statusPublished - 2003 May 12
Externally publishedYes

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thermionic emission
electric contacts
thermal stability

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Thermal stability of WSix and W Schottky contacts on n-GaN. / Kim, Ji Hyun; Ren, F.; Baca, A. G.; Pearton, S. J.

In: Applied Physics Letters, Vol. 82, No. 19, 12.05.2003, p. 3263-3265.

Research output: Contribution to journalArticle

Kim, Ji Hyun ; Ren, F. ; Baca, A. G. ; Pearton, S. J. / Thermal stability of WSix and W Schottky contacts on n-GaN. In: Applied Physics Letters. 2003 ; Vol. 82, No. 19. pp. 3263-3265.
@article{7534fa4bf4b64ab583609bc199863544,
title = "Thermal stability of WSix and W Schottky contacts on n-GaN",
abstract = "The thermal stability of sputter-deposited W and WSix Schottky contacts on n-type GaN was reported. The barrier height was low for both W and WSix and the reverse current were larger than predicted from thermionic emission transport for both types of contacts. The results showed that the WSix was stable for anneals up to 600°C.",
author = "Kim, {Ji Hyun} and F. Ren and Baca, {A. G.} and Pearton, {S. J.}",
year = "2003",
month = "5",
day = "12",
doi = "10.1063/1.1576506",
language = "English",
volume = "82",
pages = "3263--3265",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Thermal stability of WSix and W Schottky contacts on n-GaN

AU - Kim, Ji Hyun

AU - Ren, F.

AU - Baca, A. G.

AU - Pearton, S. J.

PY - 2003/5/12

Y1 - 2003/5/12

N2 - The thermal stability of sputter-deposited W and WSix Schottky contacts on n-type GaN was reported. The barrier height was low for both W and WSix and the reverse current were larger than predicted from thermionic emission transport for both types of contacts. The results showed that the WSix was stable for anneals up to 600°C.

AB - The thermal stability of sputter-deposited W and WSix Schottky contacts on n-type GaN was reported. The barrier height was low for both W and WSix and the reverse current were larger than predicted from thermionic emission transport for both types of contacts. The results showed that the WSix was stable for anneals up to 600°C.

UR - http://www.scopus.com/inward/record.url?scp=0038657625&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038657625&partnerID=8YFLogxK

U2 - 10.1063/1.1576506

DO - 10.1063/1.1576506

M3 - Article

VL - 82

SP - 3263

EP - 3265

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -