The thermal stability of sputter-deposited W and WSix Schottky contacts on n-type GaN was reported. The barrier height was low for both W and WSix and the reverse current were larger than predicted from thermionic emission transport for both types of contacts. The results showed that the WSix was stable for anneals up to 600°C.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)