Thermal stability of WSiX Schottky contacts on n-type 4H-SiC

Ji Hyun Kim, F. Ren, A. G. Baca, G. Y. Chung, S. J. Pearton

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5 Citations (Scopus)

Abstract

Sputter-deposited WSi0.45 rectifying contacts were characterized on n-type 4H-SiC as a function of annealing and measuremental temperature. The as-deposited contacts show evidence of recombination-dominated carrier transport and a high series resistance due to ion-induced damage occurring during the Ar plasma-assisted deposition. Annealing at 500 °C for 1 min produced a maximum barrier height of 1.15 eV and reduced the diode ideality factor. The contacts were degraded by annealing at >700 °C but showed reduced forward and reverse currents when measured at elevated temperature (300 °C) compared to the more common Ni rectifying contacts.

Original languageEnglish
Pages (from-to)175-178
Number of pages4
JournalSolid-State Electronics
Volume48
Issue number1
DOIs
Publication statusPublished - 2004 Jan 1
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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