Abstract
Sputter-deposited WSi0.45 rectifying contacts were characterized on n-type 4H-SiC as a function of annealing and measuremental temperature. The as-deposited contacts show evidence of recombination-dominated carrier transport and a high series resistance due to ion-induced damage occurring during the Ar plasma-assisted deposition. Annealing at 500 °C for 1 min produced a maximum barrier height of 1.15 eV and reduced the diode ideality factor. The contacts were degraded by annealing at >700 °C but showed reduced forward and reverse currents when measured at elevated temperature (300 °C) compared to the more common Ni rectifying contacts.
| Original language | English |
|---|---|
| Pages (from-to) | 175-178 |
| Number of pages | 4 |
| Journal | Solid-State Electronics |
| Volume | 48 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2004 Jan 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Thermal stability of WSiX Schottky contacts on n-type 4H-SiC. / Kim, Ji Hyun; Ren, F.; Baca, A. G.; Chung, G. Y.; Pearton, S. J.
In: Solid-State Electronics, Vol. 48, No. 1, 01.01.2004, p. 175-178.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Thermal stability of WSiX Schottky contacts on n-type 4H-SiC
AU - Kim, Ji Hyun
AU - Ren, F.
AU - Baca, A. G.
AU - Chung, G. Y.
AU - Pearton, S. J.
PY - 2004/1/1
Y1 - 2004/1/1
N2 - Sputter-deposited WSi0.45 rectifying contacts were characterized on n-type 4H-SiC as a function of annealing and measuremental temperature. The as-deposited contacts show evidence of recombination-dominated carrier transport and a high series resistance due to ion-induced damage occurring during the Ar plasma-assisted deposition. Annealing at 500 °C for 1 min produced a maximum barrier height of 1.15 eV and reduced the diode ideality factor. The contacts were degraded by annealing at >700 °C but showed reduced forward and reverse currents when measured at elevated temperature (300 °C) compared to the more common Ni rectifying contacts.
AB - Sputter-deposited WSi0.45 rectifying contacts were characterized on n-type 4H-SiC as a function of annealing and measuremental temperature. The as-deposited contacts show evidence of recombination-dominated carrier transport and a high series resistance due to ion-induced damage occurring during the Ar plasma-assisted deposition. Annealing at 500 °C for 1 min produced a maximum barrier height of 1.15 eV and reduced the diode ideality factor. The contacts were degraded by annealing at >700 °C but showed reduced forward and reverse currents when measured at elevated temperature (300 °C) compared to the more common Ni rectifying contacts.
UR - http://www.scopus.com/inward/record.url?scp=0142216326&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0142216326&partnerID=8YFLogxK
U2 - 10.1016/S0038-1101(03)00113-8
DO - 10.1016/S0038-1101(03)00113-8
M3 - Article
AN - SCOPUS:0142216326
VL - 48
SP - 175
EP - 178
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 1
ER -