Thermal stability of WSiX Schottky contacts on n-type 4H-SiC

Jihyun Kim; F. Ren; A. G. Baca; G. Y. Chung; S. J. Pearton

doi:10.1016/S0038-1101(03)00113-8

Thermal stability of WSi_X Schottky contacts on n-type 4H-SiC

Jihyun Kim, F. Ren, A. G. Baca, G. Y. Chung, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Sputter-deposited WSi_0.45 rectifying contacts were characterized on n-type 4H-SiC as a function of annealing and measuremental temperature. The as-deposited contacts show evidence of recombination-dominated carrier transport and a high series resistance due to ion-induced damage occurring during the Ar plasma-assisted deposition. Annealing at 500 °C for 1 min produced a maximum barrier height of 1.15 eV and reduced the diode ideality factor. The contacts were degraded by annealing at >700 °C but showed reduced forward and reverse currents when measured at elevated temperature (300 °C) compared to the more common Ni rectifying contacts.

Original language	English
Pages (from-to)	175-178
Number of pages	4
Journal	Solid-State Electronics
Volume	48
Issue number	1
DOIs	https://doi.org/10.1016/S0038-1101(03)00113-8
Publication status	Published - 2004 Jan
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{f9e44c4a4ed34273aaa106fcbbb7771a,

title = "Thermal stability of WSiX Schottky contacts on n-type 4H-SiC",

abstract = "Sputter-deposited WSi0.45 rectifying contacts were characterized on n-type 4H-SiC as a function of annealing and measuremental temperature. The as-deposited contacts show evidence of recombination-dominated carrier transport and a high series resistance due to ion-induced damage occurring during the Ar plasma-assisted deposition. Annealing at 500 °C for 1 min produced a maximum barrier height of 1.15 eV and reduced the diode ideality factor. The contacts were degraded by annealing at >700 °C but showed reduced forward and reverse currents when measured at elevated temperature (300 °C) compared to the more common Ni rectifying contacts.",

author = "Jihyun Kim and F. Ren and Baca, {A. G.} and Chung, {G. Y.} and Pearton, {S. J.}",

note = "Funding Information: The work at UF is particularly supported by NASA (NAG10-316, Dr. William Knott) and the UCF-UF Space research initiative. The work at Sterling Semiconductor is particularly supported by Air Force Contract F33615-01-11-2136 (Dr. James Schofield). Sandia is a multiprogram laboratory operated by Sandia Corporation for Lockheed–Martin under DOE contract DE-AC-04-55000.",

year = "2004",

month = jan,

doi = "10.1016/S0038-1101(03)00113-8",

language = "English",

volume = "48",

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journal = "Solid-State Electronics",

issn = "0038-1101",

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T1 - Thermal stability of WSiX Schottky contacts on n-type 4H-SiC

AU - Kim, Jihyun

AU - Ren, F.

AU - Baca, A. G.

AU - Chung, G. Y.

AU - Pearton, S. J.

N1 - Funding Information: The work at UF is particularly supported by NASA (NAG10-316, Dr. William Knott) and the UCF-UF Space research initiative. The work at Sterling Semiconductor is particularly supported by Air Force Contract F33615-01-11-2136 (Dr. James Schofield). Sandia is a multiprogram laboratory operated by Sandia Corporation for Lockheed–Martin under DOE contract DE-AC-04-55000.

PY - 2004/1

Y1 - 2004/1

N2 - Sputter-deposited WSi0.45 rectifying contacts were characterized on n-type 4H-SiC as a function of annealing and measuremental temperature. The as-deposited contacts show evidence of recombination-dominated carrier transport and a high series resistance due to ion-induced damage occurring during the Ar plasma-assisted deposition. Annealing at 500 °C for 1 min produced a maximum barrier height of 1.15 eV and reduced the diode ideality factor. The contacts were degraded by annealing at >700 °C but showed reduced forward and reverse currents when measured at elevated temperature (300 °C) compared to the more common Ni rectifying contacts.

AB - Sputter-deposited WSi0.45 rectifying contacts were characterized on n-type 4H-SiC as a function of annealing and measuremental temperature. The as-deposited contacts show evidence of recombination-dominated carrier transport and a high series resistance due to ion-induced damage occurring during the Ar plasma-assisted deposition. Annealing at 500 °C for 1 min produced a maximum barrier height of 1.15 eV and reduced the diode ideality factor. The contacts were degraded by annealing at >700 °C but showed reduced forward and reverse currents when measured at elevated temperature (300 °C) compared to the more common Ni rectifying contacts.

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