Thermal stability of WSiX Schottky contacts on n-type 4H-SiC

Ji Hyun Kim, F. Ren, A. G. Baca, G. Y. Chung, S. J. Pearton

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Sputter-deposited WSi0.45 rectifying contacts were characterized on n-type 4H-SiC as a function of annealing and measuremental temperature. The as-deposited contacts show evidence of recombination-dominated carrier transport and a high series resistance due to ion-induced damage occurring during the Ar plasma-assisted deposition. Annealing at 500 °C for 1 min produced a maximum barrier height of 1.15 eV and reduced the diode ideality factor. The contacts were degraded by annealing at >700 °C but showed reduced forward and reverse currents when measured at elevated temperature (300 °C) compared to the more common Ni rectifying contacts.

Original languageEnglish
Pages (from-to)175-178
Number of pages4
JournalSolid-State Electronics
Volume48
Issue number1
DOIs
Publication statusPublished - 2004 Jan 1
Externally publishedYes

Fingerprint

electric contacts
Thermodynamic stability
thermal stability
Annealing
annealing
Carrier transport
Diodes
diodes
Ions
damage
Plasmas
Temperature
temperature
ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Thermal stability of WSiX Schottky contacts on n-type 4H-SiC. / Kim, Ji Hyun; Ren, F.; Baca, A. G.; Chung, G. Y.; Pearton, S. J.

In: Solid-State Electronics, Vol. 48, No. 1, 01.01.2004, p. 175-178.

Research output: Contribution to journalArticle

Kim, Ji Hyun ; Ren, F. ; Baca, A. G. ; Chung, G. Y. ; Pearton, S. J. / Thermal stability of WSiX Schottky contacts on n-type 4H-SiC. In: Solid-State Electronics. 2004 ; Vol. 48, No. 1. pp. 175-178.
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