Thermal stability of WSiX Schottky contacts on n-type 4H-SiC

Ji Hyun Kim; F. Ren; A. G. Baca; G. Y. Chung; S. J. Pearton

doi:10.1016/S0038-1101(03)00113-8

Thermal stability of WSi_X Schottky contacts on n-type 4H-SiC

Ji Hyun Kim, F. Ren, A. G. Baca, G. Y. Chung, S. J. Pearton

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

Sputter-deposited WSi_0.45 rectifying contacts were characterized on n-type 4H-SiC as a function of annealing and measuremental temperature. The as-deposited contacts show evidence of recombination-dominated carrier transport and a high series resistance due to ion-induced damage occurring during the Ar plasma-assisted deposition. Annealing at 500 °C for 1 min produced a maximum barrier height of 1.15 eV and reduced the diode ideality factor. The contacts were degraded by annealing at >700 °C but showed reduced forward and reverse currents when measured at elevated temperature (300 °C) compared to the more common Ni rectifying contacts.

Original language	English
Pages (from-to)	175-178
Number of pages	4
Journal	Solid-State Electronics
Volume	48
Issue number	1
DOIs	https://doi.org/10.1016/S0038-1101(03)00113-8
Publication status	Published - 2004 Jan 1
Externally published	Yes

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ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Kim, J. H., Ren, F., Baca, A. G., Chung, G. Y., & Pearton, S. J. (2004). Thermal stability of WSi_X Schottky contacts on n-type 4H-SiC. Solid-State Electronics, 48(1), 175-178. https://doi.org/10.1016/S0038-1101(03)00113-8

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10.1016/S0038-1101(03)00113-8