Abstract
Sputter-deposited WSi0.45 rectifying contacts were characterized on n-type 4H-SiC as a function of annealing and measuremental temperature. The as-deposited contacts show evidence of recombination-dominated carrier transport and a high series resistance due to ion-induced damage occurring during the Ar plasma-assisted deposition. Annealing at 500 °C for 1 min produced a maximum barrier height of 1.15 eV and reduced the diode ideality factor. The contacts were degraded by annealing at >700 °C but showed reduced forward and reverse currents when measured at elevated temperature (300 °C) compared to the more common Ni rectifying contacts.
Original language | English |
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Pages (from-to) | 175-178 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 48 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2004 Jan |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry