Abstract
This article introduces new packaging that improves the heat dissipation of RF power devices. Typically, power devices are mounted on a printed circuit board, in which the heat dissipation is made only through the bottom area of a device. The heat dissipation of the proposed structure is made through the bottom and side areas. As a result, proposed technology provides 30% improved heat dissipation in the RF GaN power amplifier. A copper sheet having a high thermal conductivity of around 400 W/mK is used as a core material to embed the power device. The measured results show that the drain efficiency of the fabricated X-band power amplifier (PA) improved by about 13% in the proposed package structure.
| Original language | English |
|---|---|
| Pages (from-to) | 2262-2267 |
| Number of pages | 6 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 60 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2018 Sept |
Keywords
- embedded IC
- high-power amplifier
- hybrid-IC
- integrated passive devices
- power packaging
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering