Thermally enhanced GaN hybrid-IC power amplifier using embedded IC process in a copper sheet

Tae Woong Yoon, Dong Su Kim, Jong Min Yook

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This article introduces new packaging that improves the heat dissipation of RF power devices. Typically, power devices are mounted on a printed circuit board, in which the heat dissipation is made only through the bottom area of a device. The heat dissipation of the proposed structure is made through the bottom and side areas. As a result, proposed technology provides 30% improved heat dissipation in the RF GaN power amplifier. A copper sheet having a high thermal conductivity of around 400 W/mK is used as a core material to embed the power device. The measured results show that the drain efficiency of the fabricated X-band power amplifier (PA) improved by about 13% in the proposed package structure.

Original languageEnglish
Pages (from-to)2262-2267
Number of pages6
JournalMicrowave and Optical Technology Letters
Volume60
Issue number9
DOIs
Publication statusPublished - 2018 Sep
Externally publishedYes

Keywords

  • embedded IC
  • high-power amplifier
  • hybrid-IC
  • integrated passive devices
  • power packaging

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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