Thermally stable and low resistance Ru ohmic contacts to n-ZnO

Han Ki Kim, Kyoung Kook Kim, Seong Ju Park, Tae Yeon Seong, Young Soo Yoon

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


We report on a promising metallisation scheme for high-quality ohmic contacts to n-ZnO:Al (nd = 3 × 1018 cm-3. The as-deposited contact yields a specific contact resistance of 2.1 × 10-3 Ω·cm2. However, annealing of the contact at 700°C for 1 min results in a resistance of 3.2 × 10-5 Ω·2. The prolonged annealing treatment causes negligible degradation of electrical and thermal properties. These results indicate that the Ru film would be a suitable scheme for the fabrication of high-performance ZnO-based optical and high-temperature devices.

Original languageEnglish
Pages (from-to)L546-L548
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number5 B
Publication statusPublished - 2002 May 15
Externally publishedYes


  • Atomic force microscopy
  • Auger electron spectroscopy
  • Ohmic contact
  • Ruthenium
  • Specific contact resistance
  • ZnO

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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