Thermally stable and low resistance Ru ohmic contacts to n-ZnO

Han Ki Kim; Kyoung Kook Kim; Seong Ju Park; Tae Yeon Seong; Young Soo Yoon

doi:10.1143/jjap.41.l546

Thermally stable and low resistance Ru ohmic contacts to n-ZnO

Han Ki Kim, Kyoung Kook Kim, Seong Ju Park, Tae Yeon Seong, Young Soo Yoon

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We report on a promising metallisation scheme for high-quality ohmic contacts to n-ZnO:Al (n_d = 3 × 10¹⁸ cm^-3. The as-deposited contact yields a specific contact resistance of 2.1 × 10^-3 Ω·cm². However, annealing of the contact at 700°C for 1 min results in a resistance of 3.2 × 10^-5 Ω·². The prolonged annealing treatment causes negligible degradation of electrical and thermal properties. These results indicate that the Ru film would be a suitable scheme for the fabrication of high-performance ZnO-based optical and high-temperature devices.

Original language	English
Pages (from-to)	L546-L548
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	5 B
DOIs	https://doi.org/10.1143/jjap.41.l546
Publication status	Published - 2002 May 15
Externally published	Yes

Keywords

Atomic force microscopy
Auger electron spectroscopy
Ohmic contact
Ruthenium
Specific contact resistance
ZnO

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.41.l546

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title = "Thermally stable and low resistance Ru ohmic contacts to n-ZnO",

abstract = "We report on a promising metallisation scheme for high-quality ohmic contacts to n-ZnO:Al (nd = 3 × 1018 cm-3. The as-deposited contact yields a specific contact resistance of 2.1 × 10-3 Ω·cm2. However, annealing of the contact at 700°C for 1 min results in a resistance of 3.2 × 10-5 Ω·2. The prolonged annealing treatment causes negligible degradation of electrical and thermal properties. These results indicate that the Ru film would be a suitable scheme for the fabrication of high-performance ZnO-based optical and high-temperature devices.",

keywords = "Atomic force microscopy, Auger electron spectroscopy, Ohmic contact, Ruthenium, Specific contact resistance, ZnO",

author = "Kim, {Han Ki} and Kim, {Kyoung Kook} and Park, {Seong Ju} and Seong, {Tae Yeon} and Yoon, {Young Soo}",

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AU - Kim, Han Ki

AU - Kim, Kyoung Kook

AU - Park, Seong Ju

AU - Seong, Tae Yeon

AU - Yoon, Young Soo

PY - 2002/5/15

Y1 - 2002/5/15

N2 - We report on a promising metallisation scheme for high-quality ohmic contacts to n-ZnO:Al (nd = 3 × 1018 cm-3. The as-deposited contact yields a specific contact resistance of 2.1 × 10-3 Ω·cm2. However, annealing of the contact at 700°C for 1 min results in a resistance of 3.2 × 10-5 Ω·2. The prolonged annealing treatment causes negligible degradation of electrical and thermal properties. These results indicate that the Ru film would be a suitable scheme for the fabrication of high-performance ZnO-based optical and high-temperature devices.

AB - We report on a promising metallisation scheme for high-quality ohmic contacts to n-ZnO:Al (nd = 3 × 1018 cm-3. The as-deposited contact yields a specific contact resistance of 2.1 × 10-3 Ω·cm2. However, annealing of the contact at 700°C for 1 min results in a resistance of 3.2 × 10-5 Ω·2. The prolonged annealing treatment causes negligible degradation of electrical and thermal properties. These results indicate that the Ru film would be a suitable scheme for the fabrication of high-performance ZnO-based optical and high-temperature devices.

KW - Atomic force microscopy

KW - Auger electron spectroscopy

KW - Ohmic contact

KW - Ruthenium

KW - Specific contact resistance

KW - ZnO

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JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Thermally stable and low resistance Ru ohmic contacts to n-ZnO

Abstract

Keywords

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