Thermally stable and low resistance Ru ohmic contacts to n-ZnO

Han Ki Kim, Kyoung Kook Kim, Seong Ju Park, Tae Yeon Seong, Young Soo Yoon

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We report on a promising metallisation scheme for high-quality ohmic contacts to n-ZnO:Al (nd = 3 × 1018 cm-3. The as-deposited contact yields a specific contact resistance of 2.1 × 10-3 Ω·cm2. However, annealing of the contact at 700°C for 1 min results in a resistance of 3.2 × 10-5 Ω·2. The prolonged annealing treatment causes negligible degradation of electrical and thermal properties. These results indicate that the Ru film would be a suitable scheme for the fabrication of high-performance ZnO-based optical and high-temperature devices.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number5 B
Publication statusPublished - 2002 May 15
Externally publishedYes

Fingerprint

Ohmic contacts
low resistance
electric contacts
Annealing
annealing
Contact resistance
Metallizing
contact resistance
Electric properties
Thermodynamic properties
thermodynamic properties
electrical properties
degradation
Fabrication
Degradation
fabrication
causes
Temperature

Keywords

  • Atomic force microscopy
  • Auger electron spectroscopy
  • Ohmic contact
  • Ruthenium
  • Specific contact resistance
  • ZnO

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Thermally stable and low resistance Ru ohmic contacts to n-ZnO. / Kim, Han Ki; Kim, Kyoung Kook; Park, Seong Ju; Seong, Tae Yeon; Yoon, Young Soo.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 41, No. 5 B, 15.05.2002.

Research output: Contribution to journalArticle

Kim, Han Ki ; Kim, Kyoung Kook ; Park, Seong Ju ; Seong, Tae Yeon ; Yoon, Young Soo. / Thermally stable and low resistance Ru ohmic contacts to n-ZnO. In: Japanese Journal of Applied Physics, Part 2: Letters. 2002 ; Vol. 41, No. 5 B.
@article{0c9dfc8c18ec484eb72efc80b6c09394,
title = "Thermally stable and low resistance Ru ohmic contacts to n-ZnO",
abstract = "We report on a promising metallisation scheme for high-quality ohmic contacts to n-ZnO:Al (nd = 3 × 1018 cm-3. The as-deposited contact yields a specific contact resistance of 2.1 × 10-3 Ω·cm2. However, annealing of the contact at 700°C for 1 min results in a resistance of 3.2 × 10-5 Ω·2. The prolonged annealing treatment causes negligible degradation of electrical and thermal properties. These results indicate that the Ru film would be a suitable scheme for the fabrication of high-performance ZnO-based optical and high-temperature devices.",
keywords = "Atomic force microscopy, Auger electron spectroscopy, Ohmic contact, Ruthenium, Specific contact resistance, ZnO",
author = "Kim, {Han Ki} and Kim, {Kyoung Kook} and Park, {Seong Ju} and Seong, {Tae Yeon} and Yoon, {Young Soo}",
year = "2002",
month = "5",
day = "15",
language = "English",
volume = "41",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "5 B",

}

TY - JOUR

T1 - Thermally stable and low resistance Ru ohmic contacts to n-ZnO

AU - Kim, Han Ki

AU - Kim, Kyoung Kook

AU - Park, Seong Ju

AU - Seong, Tae Yeon

AU - Yoon, Young Soo

PY - 2002/5/15

Y1 - 2002/5/15

N2 - We report on a promising metallisation scheme for high-quality ohmic contacts to n-ZnO:Al (nd = 3 × 1018 cm-3. The as-deposited contact yields a specific contact resistance of 2.1 × 10-3 Ω·cm2. However, annealing of the contact at 700°C for 1 min results in a resistance of 3.2 × 10-5 Ω·2. The prolonged annealing treatment causes negligible degradation of electrical and thermal properties. These results indicate that the Ru film would be a suitable scheme for the fabrication of high-performance ZnO-based optical and high-temperature devices.

AB - We report on a promising metallisation scheme for high-quality ohmic contacts to n-ZnO:Al (nd = 3 × 1018 cm-3. The as-deposited contact yields a specific contact resistance of 2.1 × 10-3 Ω·cm2. However, annealing of the contact at 700°C for 1 min results in a resistance of 3.2 × 10-5 Ω·2. The prolonged annealing treatment causes negligible degradation of electrical and thermal properties. These results indicate that the Ru film would be a suitable scheme for the fabrication of high-performance ZnO-based optical and high-temperature devices.

KW - Atomic force microscopy

KW - Auger electron spectroscopy

KW - Ohmic contact

KW - Ruthenium

KW - Specific contact resistance

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=0037095554&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037095554&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0037095554

VL - 41

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 B

ER -