Thermally stable AuBe-based ohmic contacts to p-type GaP for AlGaInP-based light-emitting diode by using a tungsten barrier layer

Dae Hyun Kim, Daesung Kang, Jae Seong Park, Tae Yeon Seong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigated how a tungsten diffusion barrier layer affected the electrical properties of AuBe/Au contacts to a p-GaP window layer (na = 5 × 1019 cm−3) for an AlGaInP-based light emitting diode. All of the as-deposited samples were ohmic. After annealing at 500 °C, the AuBe/Au contacts were electrically degraded with a specific contact resistivity of 1.0 × 10−4 Ωcm2. However, the electrical properties of the W-based contacts were improved, having a contact resistivity of 5.0 × 10−6 Ωcm2. The X-ray photoemission spectroscopy (XPS) results showed that the Ga 2p core level for the annealed AuBe/Au contacts shifted to the high binding-energy side. On the other hand, that for the AuBe/W/Au contacts shifted toward the lower binding-energy side. For the AuBe/Au contacts, both Be and P atoms were shown to be outdiffused into the metal contact after annealing. However, for the AuBe/W/Au contacts, the outdiffusion of Be atoms was prevented by the W barrier layer, and the Be atoms were indiffused into GaP. Based on the X-ray photoemission spectroscopy (XPS), Auger electron spectroscopy (AES), and electrical results, the annealing-induced electrical degradation and improvement are described and discussed.

Original languageEnglish
Pages (from-to)306-310
Number of pages5
JournalJournal of the Korean Physical Society
Volume68
Issue number2
DOIs
Publication statusPublished - 2016 Jan 1

Keywords

  • AuBe
  • Contact
  • GaP
  • Light-emitting diodes
  • W diffusion barrier

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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