Thermally stable Nb and Nb/Au ohmic contacts to p-GaN

H. K. Kim, Tae Yeon Seong, C. R. Lee

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have investigated Nb single and Nb/Au metallization schemes for the formation of thermally stable ohmic contacts to p-GaN. It is shown that the as-deposited Nb and Nb/Au contacts exhibit rectifying behavior. However, both the contacts produce ohmic characteristics when annealed at 850°C. Measurements show that the 850°C Nb/Au and Nb contacts yield a specific contact resistance of 1.9 × 10-3 and 2 × 10-2 Ωcm2, respectively. Schottky barrier heights are found to decrease with increasing annealing temperature. A comparison of the XRD and electrical results shows that the formation of gallide phases, such as Ga-Nb and Ga-Au compounds, play a role in forming ohmic contacts. Atomic force microscopy results show that the surface morphology of the Nb contacts is fairly stable up to 850°C, while the Nb/Au contacts are slightly degraded upon annealing at 850°C.

Original languageEnglish
Pages (from-to)266-270
Number of pages5
JournalJournal of Electronic Materials
Volume30
Issue number3
Publication statusPublished - 2001 Mar 1
Externally publishedYes

Fingerprint

Ohmic contacts
electric contacts
Annealing
Contact resistance
Metallizing
annealing
Surface morphology
Atomic force microscopy
contact resistance
atomic force microscopy
Temperature
temperature

Keywords

  • Au
  • Nb
  • Ohmic contacts
  • P-GaN
  • Schottky barrier heights

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Thermally stable Nb and Nb/Au ohmic contacts to p-GaN. / Kim, H. K.; Seong, Tae Yeon; Lee, C. R.

In: Journal of Electronic Materials, Vol. 30, No. 3, 01.03.2001, p. 266-270.

Research output: Contribution to journalArticle

Kim, H. K. ; Seong, Tae Yeon ; Lee, C. R. / Thermally stable Nb and Nb/Au ohmic contacts to p-GaN. In: Journal of Electronic Materials. 2001 ; Vol. 30, No. 3. pp. 266-270.
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