Thermodynamic analysis and growth characterization of thick GaN films grown by chloride VPE using GaCl 3/N 2 and NH 3/N 2

Heon Lee, Masaaki Yuri, Tetsuzo Ueda, James S. Harris

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Thermodynamic calculations were carried out on chloride transport vapor phase epitaxy of GaN using GaCl 3/N 2 and NH 3/N 2. At typical growth temperature and gas flow rates, both GaN formation and gas phase etching reactions of GaN are thermodynamically favored. Under thermodynamic equilibrium, most ammonia should decompose to nitrogen and hydrogen gases and gas phase etching of GaN occurs by HCl. From experimental measurements, less than 10% of the incoming ammonia decomposes and under this condition, GaN formation from GaCl 3/N 2 and NH 3/N 2 is thermodynamically favored. Higher V/III ratios give a larger driving force for GaN formation. These calculations match our experimental results. Experimentally, we have optimized the growth conditions of GaN. High crystalline quality thick GaN films (10 to approximately 15 μm) were grown on c-Al 2O 3. The GaN films show band edge emission dominated PL at both room temperature and 77 K. Only one set of diffraction peaks from (101̄2) planes with 60° spacing in the φ-scan of X-ray diffraction are observed. This indicates that the GaN films grown on c-Al 2O 3 are single crystalline. Typical growth rates were about 10 to approximately 15 μm/hr and typical Hall mobility values of GaN films were in the range of 3 to 40 cm 2/V sec.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages233-238
Number of pages6
Volume423
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

Other

OtherProceedings of the 1996 MRS Spring Symposium
CitySan Francisco, CA, USA
Period96/4/896/4/12

Fingerprint

Vapor phase epitaxy
Thick films
Chlorides
Gases
Thermodynamics
Ammonia
Etching
Crystalline materials
Hall mobility
Growth temperature
Flow of gases
Hydrogen
Nitrogen
Diffraction
Flow rate
X ray diffraction
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lee, H., Yuri, M., Ueda, T., & Harris, J. S. (1996). Thermodynamic analysis and growth characterization of thick GaN films grown by chloride VPE using GaCl 3/N 2 and NH 3/N 2 In Materials Research Society Symposium - Proceedings (Vol. 423, pp. 233-238). Materials Research Society.

Thermodynamic analysis and growth characterization of thick GaN films grown by chloride VPE using GaCl 3/N 2 and NH 3/N 2 . / Lee, Heon; Yuri, Masaaki; Ueda, Tetsuzo; Harris, James S.

Materials Research Society Symposium - Proceedings. Vol. 423 Materials Research Society, 1996. p. 233-238.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, H, Yuri, M, Ueda, T & Harris, JS 1996, Thermodynamic analysis and growth characterization of thick GaN films grown by chloride VPE using GaCl 3/N 2 and NH 3/N 2 in Materials Research Society Symposium - Proceedings. vol. 423, Materials Research Society, pp. 233-238, Proceedings of the 1996 MRS Spring Symposium, San Francisco, CA, USA, 96/4/8.
Lee H, Yuri M, Ueda T, Harris JS. Thermodynamic analysis and growth characterization of thick GaN films grown by chloride VPE using GaCl 3/N 2 and NH 3/N 2 In Materials Research Society Symposium - Proceedings. Vol. 423. Materials Research Society. 1996. p. 233-238
Lee, Heon ; Yuri, Masaaki ; Ueda, Tetsuzo ; Harris, James S. / Thermodynamic analysis and growth characterization of thick GaN films grown by chloride VPE using GaCl 3/N 2 and NH 3/N 2 Materials Research Society Symposium - Proceedings. Vol. 423 Materials Research Society, 1996. pp. 233-238
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