Thermodynamic prediction of SiC deposition in C3H 8-SiCl4-H2 system

Jun Woo Kim, Seong Min Jeong, Hyung Tae Kim, Kyung Ja Kim, Jong Heun Lee, Kyoon Choi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In order to deposit a homogeneous and uniform β-SiC films by chemical vapor deposition, we demonstrated the phase stability of β-SiC over graphite and silicon via computational thermodynamic calculation considering pressure, temperature and gas composition as variables. The β-SiC predominant region over other solid phases like carbon and silicon was changed gradually and consistently with temperature and pressure. Practically these maps provide necessary conditions for homogeneous β-SiC deposition of single phase. With the thermodynamic analyses, the CVD apparatus for uniform coating was modeled and simulated with computational fluid dynamics to obtain temperature and flow distribution in the CVD chamber. It gave an inspiration for the uniform temperature distribution and low local flow velocity over the deposition chamber. These calculation and model simulation could provide milestones for improving the thickness uniformity and phase homogeneity.

Original languageEnglish
Pages (from-to)236-240
Number of pages5
JournalJournal of the Korean Ceramic Society
Volume48
Issue number3
DOIs
Publication statusPublished - 2011 May 1

Fingerprint

Chemical vapor deposition
Thermodynamics
Silicon
Phase stability
Graphite
Flow velocity
Temperature
Computational fluid dynamics
Temperature distribution
Carbon
Deposits
Gases
Coatings
Chemical analysis

Keywords

  • CFD
  • CVD
  • Silicon carbide
  • Simulation
  • Thermodynamic calculation

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Thermodynamic prediction of SiC deposition in C3H 8-SiCl4-H2 system. / Kim, Jun Woo; Jeong, Seong Min; Kim, Hyung Tae; Kim, Kyung Ja; Lee, Jong Heun; Choi, Kyoon.

In: Journal of the Korean Ceramic Society, Vol. 48, No. 3, 01.05.2011, p. 236-240.

Research output: Contribution to journalArticle

Kim, Jun Woo ; Jeong, Seong Min ; Kim, Hyung Tae ; Kim, Kyung Ja ; Lee, Jong Heun ; Choi, Kyoon. / Thermodynamic prediction of SiC deposition in C3H 8-SiCl4-H2 system. In: Journal of the Korean Ceramic Society. 2011 ; Vol. 48, No. 3. pp. 236-240.
@article{816ecef1ce394b64b7c9b59bd0ee3d1a,
title = "Thermodynamic prediction of SiC deposition in C3H 8-SiCl4-H2 system",
abstract = "In order to deposit a homogeneous and uniform β-SiC films by chemical vapor deposition, we demonstrated the phase stability of β-SiC over graphite and silicon via computational thermodynamic calculation considering pressure, temperature and gas composition as variables. The β-SiC predominant region over other solid phases like carbon and silicon was changed gradually and consistently with temperature and pressure. Practically these maps provide necessary conditions for homogeneous β-SiC deposition of single phase. With the thermodynamic analyses, the CVD apparatus for uniform coating was modeled and simulated with computational fluid dynamics to obtain temperature and flow distribution in the CVD chamber. It gave an inspiration for the uniform temperature distribution and low local flow velocity over the deposition chamber. These calculation and model simulation could provide milestones for improving the thickness uniformity and phase homogeneity.",
keywords = "CFD, CVD, Silicon carbide, Simulation, Thermodynamic calculation",
author = "Kim, {Jun Woo} and Jeong, {Seong Min} and Kim, {Hyung Tae} and Kim, {Kyung Ja} and Lee, {Jong Heun} and Kyoon Choi",
year = "2011",
month = "5",
day = "1",
doi = "10.4191/KCERS.2011.48.3.236",
language = "English",
volume = "48",
pages = "236--240",
journal = "Journal of the Korean Ceramic Society",
issn = "1229-7801",
publisher = "Korean Ceramic Society",
number = "3",

}

TY - JOUR

T1 - Thermodynamic prediction of SiC deposition in C3H 8-SiCl4-H2 system

AU - Kim, Jun Woo

AU - Jeong, Seong Min

AU - Kim, Hyung Tae

AU - Kim, Kyung Ja

AU - Lee, Jong Heun

AU - Choi, Kyoon

PY - 2011/5/1

Y1 - 2011/5/1

N2 - In order to deposit a homogeneous and uniform β-SiC films by chemical vapor deposition, we demonstrated the phase stability of β-SiC over graphite and silicon via computational thermodynamic calculation considering pressure, temperature and gas composition as variables. The β-SiC predominant region over other solid phases like carbon and silicon was changed gradually and consistently with temperature and pressure. Practically these maps provide necessary conditions for homogeneous β-SiC deposition of single phase. With the thermodynamic analyses, the CVD apparatus for uniform coating was modeled and simulated with computational fluid dynamics to obtain temperature and flow distribution in the CVD chamber. It gave an inspiration for the uniform temperature distribution and low local flow velocity over the deposition chamber. These calculation and model simulation could provide milestones for improving the thickness uniformity and phase homogeneity.

AB - In order to deposit a homogeneous and uniform β-SiC films by chemical vapor deposition, we demonstrated the phase stability of β-SiC over graphite and silicon via computational thermodynamic calculation considering pressure, temperature and gas composition as variables. The β-SiC predominant region over other solid phases like carbon and silicon was changed gradually and consistently with temperature and pressure. Practically these maps provide necessary conditions for homogeneous β-SiC deposition of single phase. With the thermodynamic analyses, the CVD apparatus for uniform coating was modeled and simulated with computational fluid dynamics to obtain temperature and flow distribution in the CVD chamber. It gave an inspiration for the uniform temperature distribution and low local flow velocity over the deposition chamber. These calculation and model simulation could provide milestones for improving the thickness uniformity and phase homogeneity.

KW - CFD

KW - CVD

KW - Silicon carbide

KW - Simulation

KW - Thermodynamic calculation

UR - http://www.scopus.com/inward/record.url?scp=79958831505&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958831505&partnerID=8YFLogxK

U2 - 10.4191/KCERS.2011.48.3.236

DO - 10.4191/KCERS.2011.48.3.236

M3 - Article

AN - SCOPUS:79958831505

VL - 48

SP - 236

EP - 240

JO - Journal of the Korean Ceramic Society

JF - Journal of the Korean Ceramic Society

SN - 1229-7801

IS - 3

ER -