Thermoelectric power measurements of wide band gap semiconducting nanowires

Chul-Ho Lee, Gyu Chul Yi, Yuri M. Zuev, Philip Kim

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

We investigated the temperature-dependent thermoelectric power (TEP) of individual wide band gap ZnO and GaN semiconducting nanowires by fabricating the devices with good Ohmic contacts. In the temperature range of 10-300 K, the measured TEP of both nanowires was linearly dependent on temperature, indicating the degenerate doping nature of these nanowires. The room temperature TEP value of ZnO nanowires was as high as -400 μV/K while an order of magnitude smaller TEP value was observed in GaN. The negative sign of TEP values shows that electrons are the majority carriers in these wide band gap nanowires. More importantly, in comparison with gate-dependent transport measurements of the nanowire field effect transistors, analysis of temperature-dependent TEP measurements provides a reliable way of estimating the majority carrier concentration of nanowires, where conventional Hall effect measurements cannot be used.

Original languageEnglish
Article number022106
JournalApplied Physics Letters
Volume94
Issue number2
DOIs
Publication statusPublished - 2009 Jan 23
Externally publishedYes

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nanowires
broadband
majority carriers
temperature
Hall effect
electric contacts
estimating
field effect transistors
room temperature
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Thermoelectric power measurements of wide band gap semiconducting nanowires. / Lee, Chul-Ho; Yi, Gyu Chul; Zuev, Yuri M.; Kim, Philip.

In: Applied Physics Letters, Vol. 94, No. 2, 022106, 23.01.2009.

Research output: Contribution to journalArticle

Lee, Chul-Ho ; Yi, Gyu Chul ; Zuev, Yuri M. ; Kim, Philip. / Thermoelectric power measurements of wide band gap semiconducting nanowires. In: Applied Physics Letters. 2009 ; Vol. 94, No. 2.
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