Thermopower profiling across a silicon p-n junction through the 2ω signal measurement of AC current-heated tip-sample nano-contact

Kim Kyeongtae, Park Jisang, Ung Kim Sun, Oh Myoung Kwon, Sik Lee Joon, Ho Park Seung, Ki Choi Young

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thermopower profiling with nanometer resolution has important applications in the development of nano-structured high ZT thermoelectric materials and in dopant density profiling of nano-electronic devices. We suggested a new AC type thermopower measurement technique and demonstrated it with a simple experimental setup. Thermopower distribution across a silicon p-n junction was measured point-by-point at every 10 nm free from the noises due to built-in potential andphoto-ionization effect and compared with theoretical result. Although this new AC type thermopower measurement technique could not follow the sharp variation of the theoretical thermopower near the p-n junction, it could identify a smooth peak of thermopower distribution in the depletion layer of the p-n junction.

Original languageEnglish
Title of host publication1st International Conference on Thermal Issues in Emerging Technologies, Theory and Applications; Proceedings - ThETA1
Pages177-181
Number of pages5
DOIs
Publication statusPublished - 2007 Dec 17
Event1st International Conference on Thermal Issues in Emerging Technologies, Theory and Applications; Proceedings - ThETA1 - Cairo, Egypt
Duration: 2007 Jan 32007 Jan 6

Other

Other1st International Conference on Thermal Issues in Emerging Technologies, Theory and Applications; Proceedings - ThETA1
CountryEgypt
CityCairo
Period07/1/307/1/6

Fingerprint

Thermoelectric power
Silicon
Nanoelectronics
Ionization potential
Doping (additives)

ASJC Scopus subject areas

  • Energy Engineering and Power Technology

Cite this

Kyeongtae, K., Jisang, P., Sun, U. K., Kwon, O. M., Joon, S. L., Seung, H. P., & Young, K. C. (2007). Thermopower profiling across a silicon p-n junction through the 2ω signal measurement of AC current-heated tip-sample nano-contact. In 1st International Conference on Thermal Issues in Emerging Technologies, Theory and Applications; Proceedings - ThETA1 (pp. 177-181). [4211115] https://doi.org/10.1109/THETA.2007.363437

Thermopower profiling across a silicon p-n junction through the 2ω signal measurement of AC current-heated tip-sample nano-contact. / Kyeongtae, Kim; Jisang, Park; Sun, Ung Kim; Kwon, Oh Myoung; Joon, Sik Lee; Seung, Ho Park; Young, Ki Choi.

1st International Conference on Thermal Issues in Emerging Technologies, Theory and Applications; Proceedings - ThETA1. 2007. p. 177-181 4211115.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kyeongtae, K, Jisang, P, Sun, UK, Kwon, OM, Joon, SL, Seung, HP & Young, KC 2007, Thermopower profiling across a silicon p-n junction through the 2ω signal measurement of AC current-heated tip-sample nano-contact. in 1st International Conference on Thermal Issues in Emerging Technologies, Theory and Applications; Proceedings - ThETA1., 4211115, pp. 177-181, 1st International Conference on Thermal Issues in Emerging Technologies, Theory and Applications; Proceedings - ThETA1, Cairo, Egypt, 07/1/3. https://doi.org/10.1109/THETA.2007.363437
Kyeongtae K, Jisang P, Sun UK, Kwon OM, Joon SL, Seung HP et al. Thermopower profiling across a silicon p-n junction through the 2ω signal measurement of AC current-heated tip-sample nano-contact. In 1st International Conference on Thermal Issues in Emerging Technologies, Theory and Applications; Proceedings - ThETA1. 2007. p. 177-181. 4211115 https://doi.org/10.1109/THETA.2007.363437
Kyeongtae, Kim ; Jisang, Park ; Sun, Ung Kim ; Kwon, Oh Myoung ; Joon, Sik Lee ; Seung, Ho Park ; Young, Ki Choi. / Thermopower profiling across a silicon p-n junction through the 2ω signal measurement of AC current-heated tip-sample nano-contact. 1st International Conference on Thermal Issues in Emerging Technologies, Theory and Applications; Proceedings - ThETA1. 2007. pp. 177-181
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