Thick membrane operated rf microelectromechanical system switch with low actuation voltage

Jongseok Kim, Sangwook Kwon, Youngtack Hong, Heemoon Jeong, Insang Song, Byeong Kwon Ju

Research output: Contribution to journalArticle

Abstract

Most researcher who have studied the radio frequency (rf) microelectromechanical system (MEMS) switch has focused on the electrostatic actuation types switch because of this type's low power consumption, simple fabrication method, and good rf characteristics compared to magnetic, thermal, and piezoelectric driving method. However, most of electrostatic actuation type switch needs high operation voltage compared to other types. One of the reasons that affect the high operation voltage is the bending of the membrane because of an internal stress gradient. This bending increases the gap between electrode and membrane. To solve this problem, the authors developed the thick membrane operated seesaw type rf MEMS switch. This membrane consisted of a pivot under single crystal thick silicon membrane for a seesaw mode operation and a flexible spring for an up-down actuation mode. After the fabrication of this switch, the authors measured its rf characteristics. The minimum actuation voltage was about 12 V, the isolation is about -50 dB, and the insertion loss was about -0.2 dB at 2 GHz, respectively.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number1
DOIs
Publication statusPublished - 2009 Feb 17

Fingerprint

actuation
microelectromechanical systems
MEMS
radio frequencies
switches
Switches
membranes
Membranes
Electric potential
electric potential
Electrostatics
electrostatics
pivots
Fabrication
fabrication
Insertion losses
insertion loss
residual stress
Residual stresses
isolation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Thick membrane operated rf microelectromechanical system switch with low actuation voltage. / Kim, Jongseok; Kwon, Sangwook; Hong, Youngtack; Jeong, Heemoon; Song, Insang; Ju, Byeong Kwon.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 1, 17.02.2009, p. 1-5.

Research output: Contribution to journalArticle

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