Thickness dependence of magnetic domain pinning energy in GaMnAs ferromagnetic semiconductor films

Sun Young Yea, Sun Jae Chung, Hyunji Son, Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Magnetotransport measurements were performed on GaMnAs films with four different thicknesses. The process of magnetization reorientation was investigated by planar Hall effect, from which the magnetization switching fields were determined for each film thickness. Domain pinning energies were then obtained for the films by fitting the angular dependence of the switching fields using the model developed by Cowburn [J. Appl. Phys. 78, 7210 (1995)]. The results show a systematic increase of domain pinning energies as the thickness of the film decreases. Such dependence of domain pinning can be understood in terms of the carrier dependence of magnetic anisotropy in GaMnAs films on the concentration of carriers.

Original languageEnglish
Article number07D118
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
Publication statusPublished - 2008 Apr 21

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magnetic domains
magnetization
energy
retraining
Hall effect
film thickness
anisotropy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Thickness dependence of magnetic domain pinning energy in GaMnAs ferromagnetic semiconductor films. / Yea, Sun Young; Chung, Sun Jae; Son, Hyunji; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: Journal of Applied Physics, Vol. 103, No. 7, 07D118, 21.04.2008.

Research output: Contribution to journalArticle

Yea, Sun Young ; Chung, Sun Jae ; Son, Hyunji ; Lee, Sang Hoon ; Liu, X. ; Furdyna, J. K. / Thickness dependence of magnetic domain pinning energy in GaMnAs ferromagnetic semiconductor films. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 7.
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