TY - JOUR
T1 - Thickness dependence of uniaxial anisotropy fields in GaMnAs films
AU - Bac, Seul Ki
AU - Lee, Hakjoon
AU - Lee, Sangyeop
AU - Choi, Seonghoon
AU - Yoo, Taehee
AU - Lee, Sanghoon
AU - Liu, Xinyu
AU - Furdyna, Jacek
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2015/3/1
Y1 - 2015/3/1
N2 - Our investigation of thin GaMnAs films with different thicknesses revealed that the magnetic properties of this material strongly depend on film thickness. For this study, a single GaMnAs film was selectively etched, and its properties were then investigated by planar Hall effect measurements. A particularly important conclusion from the results is the emergence of a uniaxial anisotropy field along the [100] crystalline direction, which increases rapidly with increasing film thickness. We argue that such thickness dependence of the [100] uniaxial anisotropy results from the crystal structure of the film, rather than from the effects of the interface between the GaMnAs and the substrate.
AB - Our investigation of thin GaMnAs films with different thicknesses revealed that the magnetic properties of this material strongly depend on film thickness. For this study, a single GaMnAs film was selectively etched, and its properties were then investigated by planar Hall effect measurements. A particularly important conclusion from the results is the emergence of a uniaxial anisotropy field along the [100] crystalline direction, which increases rapidly with increasing film thickness. We argue that such thickness dependence of the [100] uniaxial anisotropy results from the crystal structure of the film, rather than from the effects of the interface between the GaMnAs and the substrate.
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U2 - 10.7567/APEX.8.033201
DO - 10.7567/APEX.8.033201
M3 - Article
AN - SCOPUS:84923973303
VL - 8
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 3
M1 - 033201
ER -