Thickness dependence of uniaxial anisotropy fields in GaMnAs films

Seul Ki Bac; Hakjoon Lee; Sangyeop Lee; Seonghoon Choi; Taehee Yoo; Sanghoon Lee; Xinyu Liu; Jacek Furdyna

doi:10.7567/APEX.8.033201

Thickness dependence of uniaxial anisotropy fields in GaMnAs films

Seul Ki Bac, Hakjoon Lee, Sangyeop Lee, Seonghoon Choi, Taehee Yoo, Sanghoon Lee, Xinyu Liu, Jacek Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Our investigation of thin GaMnAs films with different thicknesses revealed that the magnetic properties of this material strongly depend on film thickness. For this study, a single GaMnAs film was selectively etched, and its properties were then investigated by planar Hall effect measurements. A particularly important conclusion from the results is the emergence of a uniaxial anisotropy field along the [100] crystalline direction, which increases rapidly with increasing film thickness. We argue that such thickness dependence of the [100] uniaxial anisotropy results from the crystal structure of the film, rather than from the effects of the interface between the GaMnAs and the substrate.

Original language	English
Article number	033201
Journal	Applied Physics Express
Volume	8
Issue number	3
DOIs	https://doi.org/10.7567/APEX.8.033201
Publication status	Published - 2015 Mar 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{51b693a113e841fda4ea93b371e30795,

title = "Thickness dependence of uniaxial anisotropy fields in GaMnAs films",

abstract = "Our investigation of thin GaMnAs films with different thicknesses revealed that the magnetic properties of this material strongly depend on film thickness. For this study, a single GaMnAs film was selectively etched, and its properties were then investigated by planar Hall effect measurements. A particularly important conclusion from the results is the emergence of a uniaxial anisotropy field along the [100] crystalline direction, which increases rapidly with increasing film thickness. We argue that such thickness dependence of the [100] uniaxial anisotropy results from the crystal structure of the film, rather than from the effects of the interface between the GaMnAs and the substrate.",

author = "Bac, {Seul Ki} and Hakjoon Lee and Sangyeop Lee and Seonghoon Choi and Taehee Yoo and Sanghoon Lee and Xinyu Liu and Jacek Furdyna",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

year = "2015",

month = mar,

day = "1",

doi = "10.7567/APEX.8.033201",

language = "English",

volume = "8",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "3",

}

TY - JOUR

T1 - Thickness dependence of uniaxial anisotropy fields in GaMnAs films

AU - Bac, Seul Ki

AU - Lee, Hakjoon

AU - Lee, Sangyeop

AU - Choi, Seonghoon

AU - Yoo, Taehee

AU - Lee, Sanghoon

AU - Liu, Xinyu

AU - Furdyna, Jacek

PY - 2015/3/1

Y1 - 2015/3/1

N2 - Our investigation of thin GaMnAs films with different thicknesses revealed that the magnetic properties of this material strongly depend on film thickness. For this study, a single GaMnAs film was selectively etched, and its properties were then investigated by planar Hall effect measurements. A particularly important conclusion from the results is the emergence of a uniaxial anisotropy field along the [100] crystalline direction, which increases rapidly with increasing film thickness. We argue that such thickness dependence of the [100] uniaxial anisotropy results from the crystal structure of the film, rather than from the effects of the interface between the GaMnAs and the substrate.

AB - Our investigation of thin GaMnAs films with different thicknesses revealed that the magnetic properties of this material strongly depend on film thickness. For this study, a single GaMnAs film was selectively etched, and its properties were then investigated by planar Hall effect measurements. A particularly important conclusion from the results is the emergence of a uniaxial anisotropy field along the [100] crystalline direction, which increases rapidly with increasing film thickness. We argue that such thickness dependence of the [100] uniaxial anisotropy results from the crystal structure of the film, rather than from the effects of the interface between the GaMnAs and the substrate.

UR - http://www.scopus.com/inward/record.url?scp=84923973303&partnerID=8YFLogxK

U2 - 10.7567/APEX.8.033201

DO - 10.7567/APEX.8.033201

M3 - Article

AN - SCOPUS:84923973303

VL - 8

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 3

M1 - 033201

ER -

Thickness dependence of uniaxial anisotropy fields in GaMnAs films

Abstract

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