Abstract
Our investigation of thin GaMnAs films with different thicknesses revealed that the magnetic properties of this material strongly depend on film thickness. For this study, a single GaMnAs film was selectively etched, and its properties were then investigated by planar Hall effect measurements. A particularly important conclusion from the results is the emergence of a uniaxial anisotropy field along the [100] crystalline direction, which increases rapidly with increasing film thickness. We argue that such thickness dependence of the [100] uniaxial anisotropy results from the crystal structure of the film, rather than from the effects of the interface between the GaMnAs and the substrate.
| Original language | English |
|---|---|
| Article number | 033201 |
| Journal | Applied Physics Express |
| Volume | 8 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2015 Mar 1 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Thickness dependence of uniaxial anisotropy fields in GaMnAs films. / Bac, Seul Ki; Lee, Hakjoon; Lee, Sangyeop; Choi, Seonghoon; Yoo, Taehee; Lee, Sang Hoon; Liu, Xinyu; Furdyna, Jacek.
In: Applied Physics Express, Vol. 8, No. 3, 033201, 01.03.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Thickness dependence of uniaxial anisotropy fields in GaMnAs films
AU - Bac, Seul Ki
AU - Lee, Hakjoon
AU - Lee, Sangyeop
AU - Choi, Seonghoon
AU - Yoo, Taehee
AU - Lee, Sang Hoon
AU - Liu, Xinyu
AU - Furdyna, Jacek
PY - 2015/3/1
Y1 - 2015/3/1
N2 - Our investigation of thin GaMnAs films with different thicknesses revealed that the magnetic properties of this material strongly depend on film thickness. For this study, a single GaMnAs film was selectively etched, and its properties were then investigated by planar Hall effect measurements. A particularly important conclusion from the results is the emergence of a uniaxial anisotropy field along the [100] crystalline direction, which increases rapidly with increasing film thickness. We argue that such thickness dependence of the [100] uniaxial anisotropy results from the crystal structure of the film, rather than from the effects of the interface between the GaMnAs and the substrate.
AB - Our investigation of thin GaMnAs films with different thicknesses revealed that the magnetic properties of this material strongly depend on film thickness. For this study, a single GaMnAs film was selectively etched, and its properties were then investigated by planar Hall effect measurements. A particularly important conclusion from the results is the emergence of a uniaxial anisotropy field along the [100] crystalline direction, which increases rapidly with increasing film thickness. We argue that such thickness dependence of the [100] uniaxial anisotropy results from the crystal structure of the film, rather than from the effects of the interface between the GaMnAs and the substrate.
UR - http://www.scopus.com/inward/record.url?scp=84923973303&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84923973303&partnerID=8YFLogxK
U2 - 10.7567/APEX.8.033201
DO - 10.7567/APEX.8.033201
M3 - Article
AN - SCOPUS:84923973303
VL - 8
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 3
M1 - 033201
ER -