Abstract
Our investigation of thin GaMnAs films with different thicknesses revealed that the magnetic properties of this material strongly depend on film thickness. For this study, a single GaMnAs film was selectively etched, and its properties were then investigated by planar Hall effect measurements. A particularly important conclusion from the results is the emergence of a uniaxial anisotropy field along the [100] crystalline direction, which increases rapidly with increasing film thickness. We argue that such thickness dependence of the [100] uniaxial anisotropy results from the crystal structure of the film, rather than from the effects of the interface between the GaMnAs and the substrate.
| Original language | English |
|---|---|
| Article number | 033201 |
| Journal | Applied Physics Express |
| Volume | 8 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2015 Mar 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Bac, S. K., Lee, H., Lee, S., Choi, S., Yoo, T., Lee, S. H., Liu, X., & Furdyna, J. (2015). Thickness dependence of uniaxial anisotropy fields in GaMnAs films. Applied Physics Express, 8(3), [033201]. https://doi.org/10.7567/APEX.8.033201