Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors

Ji Heon Kim, Tae Ho Kim, Hyunjea Lee, Young Ran Park, Woong Choi, Cheol Jin Lee

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We investigated the dependence of electron mobility on the thickness of MoS2 nanosheets by fabricating bottom-gate single and few-layer MoS2 thin-film transistors with SiO2 gate dielectrics and Au electrodes. All the fabricated MoS2 transistors showed on/off-current ratio of ∼107 and saturated output characteristics without high-k capping layers. As the MoS2 thickness increased from 1 to 6 layers, the field-effect mobility of the fabricated MoS2 transistors increased from ∼10 to ∼18 cm2V-1s-1. The increased subthreshold swing of the fabricated transistors with MoS2 thickness suggests that the increase of MoS2 mobility with thickness may be related to the dependence of the contact resistance and the dielectric constant of MoS2 layer on its thickness.

Original languageEnglish
Article number065106
JournalAIP Advances
Volume6
Issue number6
DOIs
Publication statusPublished - 2016 Jun 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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