Thickness dependent ferroelectric properties of BSTO thin films deposited by RF magnetron sputtering

Jong Yoon Ha, Ji Won Choi, Chong Yun Kang, S. F. Karmanenko, Doo Jin Choi, Seok Jin Yoon, Hyun Jai Kim

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6 Citations (Scopus)

Abstract

The thickness dependence of ferroelectric permittivity of (Ba, Sr)TiO 3 has been investigated. The BST films could be obtained to have a simple cubic perovskite structure, space group Pm3m, and practically c-axis epitaxial structure deposited at 800°C. Through post-annealing process, we have improved the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after annealing is attributed to the change in film strain and the contraction in film lattice. As the thickness of BST films increases from 55 nm to 350 nm, the dielectric constant of BST films increases from about 100 to above 670 due to the reduction of interfacial dead layers with low dielectric constant between films and top electrodes. The dielectric loss of BST thin films decreased as the thickness increases. The existence of interfacial dead layers in a thinner film had a larger effect on the effective dielectric constant than tensile strain between the BST films and MgO substrate.

Original languageEnglish
Pages (from-to)141-144
Number of pages4
JournalJournal of Electroceramics
Volume17
Issue number2-4
DOIs
Publication statusPublished - 2006 Dec 1
Externally publishedYes

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Keywords

  • BST
  • Ferroelectric
  • Microwave
  • RF sputtering
  • Tunable devices

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Ha, J. Y., Choi, J. W., Kang, C. Y., Karmanenko, S. F., Choi, D. J., Yoon, S. J., & Kim, H. J. (2006). Thickness dependent ferroelectric properties of BSTO thin films deposited by RF magnetron sputtering. Journal of Electroceramics, 17(2-4), 141-144. https://doi.org/10.1007/s10832-006-9734-2