Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

Junyoung Kwon, Jong Young Lee, Young Jun Yu, Chul-Ho Lee, Xu Cui, James Hone, Gwan Hyoung Lee

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.

Original languageEnglish
Pages (from-to)6151-6157
Number of pages7
JournalNanoscale
Volume9
Issue number18
DOIs
Publication statusPublished - 2017 May 14

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Contact resistance
Field effect transistors
Metals
Transition metals
Semiconductor materials

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Kwon, J., Lee, J. Y., Yu, Y. J., Lee, C-H., Cui, X., Hone, J., & Lee, G. H. (2017). Thickness-dependent Schottky barrier height of MoS2 field-effect transistors. Nanoscale, 9(18), 6151-6157. https://doi.org/10.1039/c7nr01501a

Thickness-dependent Schottky barrier height of MoS2 field-effect transistors. / Kwon, Junyoung; Lee, Jong Young; Yu, Young Jun; Lee, Chul-Ho; Cui, Xu; Hone, James; Lee, Gwan Hyoung.

In: Nanoscale, Vol. 9, No. 18, 14.05.2017, p. 6151-6157.

Research output: Contribution to journalArticle

Kwon, J, Lee, JY, Yu, YJ, Lee, C-H, Cui, X, Hone, J & Lee, GH 2017, 'Thickness-dependent Schottky barrier height of MoS2 field-effect transistors', Nanoscale, vol. 9, no. 18, pp. 6151-6157. https://doi.org/10.1039/c7nr01501a
Kwon, Junyoung ; Lee, Jong Young ; Yu, Young Jun ; Lee, Chul-Ho ; Cui, Xu ; Hone, James ; Lee, Gwan Hyoung. / Thickness-dependent Schottky barrier height of MoS2 field-effect transistors. In: Nanoscale. 2017 ; Vol. 9, No. 18. pp. 6151-6157.
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