Thickness effect of a Ge interlayer on the formation of nickel silicides

Chel Jong Choi, Sung Yong Chang, Seong Jae Lee, Young Woo Ok, Tae Yeon Seong

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We have investigated the thickness effect of Ge interlayers on the formation of nickel silicides as a function of the rapid-thermal-annealing temperature by means of glancing angle X-ray diffraction and scanning transmission electron microscopy combined with energy-dispersive X-ray spectrometry. It is shown that the insertion of 2 and 5 nm thick Ge interlayers between Ni films and Si substrates leads to an increase of the nucleation temperature for NiSi2 by higher than 150°C. The increased nucleation temperature could be related to the formation of NiSi1-x Gex in the interface regions between the NiSi films and Si substrates. It is further shown that the morphological degradation of the samples with interlayers is more severe than that of the samples without interlayers. The interlayer dependence of the structural changes of Ni silicide films is described and discussed in terms of surface energy and Ge diffusion behavior.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume154
Issue number9
DOIs
Publication statusPublished - 2007 Aug 6

Fingerprint

Silicides
silicides
Nickel
interlayers
nickel
Nucleation
Rapid thermal annealing
Substrates
Interfacial energy
Temperature
nucleation
Transmission electron microscopy
X ray diffraction
Degradation
Scanning electron microscopy
x ray spectroscopy
surface energy
temperature
insertion
degradation

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Thickness effect of a Ge interlayer on the formation of nickel silicides. / Choi, Chel Jong; Chang, Sung Yong; Lee, Seong Jae; Ok, Young Woo; Seong, Tae Yeon.

In: Journal of the Electrochemical Society, Vol. 154, No. 9, 06.08.2007.

Research output: Contribution to journalArticle

Choi, Chel Jong ; Chang, Sung Yong ; Lee, Seong Jae ; Ok, Young Woo ; Seong, Tae Yeon. / Thickness effect of a Ge interlayer on the formation of nickel silicides. In: Journal of the Electrochemical Society. 2007 ; Vol. 154, No. 9.
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