Thickness effects of SiOxNy, interlayer inserted between BaTiO3 insulating layer and ZnS

Mn phosphor layer in thin film electroluminescent devices

M. H. Song, Yun-Hi Lee, T. S. Hahn, M. H. Oh, K. H. Yoon

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We investigated the effects of a SiOxNy, interlayer on a thin film electroluminescent device, inserted between an amorphous BaTiO3 thin film and a ZnS:Mn phosphor layer. The effects on the thin film electroluminescent device was studied as a function of the thickness of the interlayer. We found that the introduction of the interlayer affected the growth behavior of the phosphor layer. With increasing thickness of the interlayer, the average grain size and the crystallinity of the phosphor layer was improved. The turn-on voltage of the electroluminescent device increased, and the saturation brightness slightly decreased with increasing interlayer thickness. In the case of the TFELD without the interlayer, Poole-Frenkel conduction was observed in the low dc field region, the devices with the interlayer exhibited effective electron tunneling from interface traps. The efficiency of the devices increased with increasing interlayer thickness.

Original languageEnglish
Pages (from-to)157-164
Number of pages8
JournalJournal of Crystal Growth
Volume167
Issue number1-2
Publication statusPublished - 1996 Sep 1
Externally publishedYes

Fingerprint

Luminescent devices
Phosphors
phosphors
interlayers
Thin films
thin films
Electron tunneling
Amorphous films
Luminance
Electric potential
electron tunneling
crystallinity
brightness
grain size
traps
saturation
conduction
electric potential

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Thickness effects of SiOxNy, interlayer inserted between BaTiO3 insulating layer and ZnS : Mn phosphor layer in thin film electroluminescent devices. / Song, M. H.; Lee, Yun-Hi; Hahn, T. S.; Oh, M. H.; Yoon, K. H.

In: Journal of Crystal Growth, Vol. 167, No. 1-2, 01.09.1996, p. 157-164.

Research output: Contribution to journalArticle

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