Thickness effects of SiOxNy, interlayer inserted between BaTiO3 insulating layer and ZnS:Mn phosphor layer in thin film electroluminescent devices

M. H. Song, Y. H. Lee, T. S. Hahn, M. H. Oh, K. H. Yoon

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6 Citations (Scopus)


We investigated the effects of a SiOxNy, interlayer on a thin film electroluminescent device, inserted between an amorphous BaTiO3 thin film and a ZnS:Mn phosphor layer. The effects on the thin film electroluminescent device was studied as a function of the thickness of the interlayer. We found that the introduction of the interlayer affected the growth behavior of the phosphor layer. With increasing thickness of the interlayer, the average grain size and the crystallinity of the phosphor layer was improved. The turn-on voltage of the electroluminescent device increased, and the saturation brightness slightly decreased with increasing interlayer thickness. In the case of the TFELD without the interlayer, Poole-Frenkel conduction was observed in the low dc field region, the devices with the interlayer exhibited effective electron tunneling from interface traps. The efficiency of the devices increased with increasing interlayer thickness.

Original languageEnglish
Pages (from-to)157-164
Number of pages8
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - 1996 Sep

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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