TY - JOUR
T1 - Thienothiophene-benzotriazole-based semicrystalline linear copolymers for organic field effect transistors
AU - Yum, Seungjib
AU - An, Tae Kyu
AU - Wang, Xiaowei
AU - Uddin, Mohammad Afsar
AU - Nguyen, Thanh Luan
AU - Xu, Shuhao
AU - Ryu, Hwasook
AU - Kim, Yu Jin
AU - Hwang, Sungu
AU - Park, Chan Eon
AU - Woo, Han Young
PY - 2014/8/20
Y1 - 2014/8/20
N2 - A series of thienothiophene-benzotriazole-based semicrystalline copolymers, PTTBTz, PTTBTz- F, and PTTBTz-OR, were synthesized by considering chain linearity, planarity and inter-chain packing by virtue of non-covalent attractive interaction. Fluorine and alkoxy substituents were introduced to modulate the intra- and inter-chain coulombic interactions and crystalline ordering. The fluorine and alkoxy-substituted PTTBTz-F and PTTBTz-OR showed pronounced inter-chain packing with edge-on orientation confirmed by UV-vs absorption and X-ray diffraction measurements. The well-resolved diffraction patterns were obtained for PTTBTz-F and PTTBTz-OR, showing (100)∼(500) inter-lamellar scattering peaks (d-spacing, 17∼18 Å) in the out-of-plane direction and a π-π stacking peak (d-spacing, 3.5∼4.1 Å) in the in-plane direction. Organic field effect transistor (OFET) devices were fabricated with a bottom gate and top contact geometry. PTTBTz-F (μh =4.49 ×10-2cm2 V-1 s-1, on/off ratio =1.13 ×107) and PTTBTz-OR (μh =8.39 ×10-3 cm2 V-1 s-1, on/off ratio =2.98 ×104) showed nearly 3 and 2 orders of magnitude higher hole mobility upon annealing at 305 and 260 °C, with compared to the unsubstituted PTTBTz.
AB - A series of thienothiophene-benzotriazole-based semicrystalline copolymers, PTTBTz, PTTBTz- F, and PTTBTz-OR, were synthesized by considering chain linearity, planarity and inter-chain packing by virtue of non-covalent attractive interaction. Fluorine and alkoxy substituents were introduced to modulate the intra- and inter-chain coulombic interactions and crystalline ordering. The fluorine and alkoxy-substituted PTTBTz-F and PTTBTz-OR showed pronounced inter-chain packing with edge-on orientation confirmed by UV-vs absorption and X-ray diffraction measurements. The well-resolved diffraction patterns were obtained for PTTBTz-F and PTTBTz-OR, showing (100)∼(500) inter-lamellar scattering peaks (d-spacing, 17∼18 Å) in the out-of-plane direction and a π-π stacking peak (d-spacing, 3.5∼4.1 Å) in the in-plane direction. Organic field effect transistor (OFET) devices were fabricated with a bottom gate and top contact geometry. PTTBTz-F (μh =4.49 ×10-2cm2 V-1 s-1, on/off ratio =1.13 ×107) and PTTBTz-OR (μh =8.39 ×10-3 cm2 V-1 s-1, on/off ratio =2.98 ×104) showed nearly 3 and 2 orders of magnitude higher hole mobility upon annealing at 305 and 260 °C, with compared to the unsubstituted PTTBTz.
KW - ICFPAM-2013
KW - Optoelectronics
KW - Organic field-effect transistors
KW - Semiconductors
KW - X-ray diffraction
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U2 - 10.1515/pac-2014-0205
DO - 10.1515/pac-2014-0205
M3 - Article
AN - SCOPUS:84922301291
VL - 86
SP - 1293
EP - 1302
JO - Pure and Applied Chemistry
JF - Pure and Applied Chemistry
SN - 0033-4545
IS - 8
ER -