Thin film phosphor prepared by physical vapor deposition for field emission display application

Yun-Hi Lee, Man H. Song, Byeong Kwon Ju, Dong K. Shin, Myung Hwan Oh

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We fabricated very thin ZnO:Zn film using rf magnetron sputtering and ZnS:Pr.Ce layer by electron-beam evaporation for color field emission display application. Also, in order to investigate the influence of surface conductive layer onto the phosphor films upon the emission characteristics, we prepared the layered structures having an additional conducting layer of 2-6-nm-thick Sn-doped In2O3 film. Cathodoluminescence spectrum of sputtered ZnO:Zn (250 nm) film shows two broad peaks centered around 540 and 600 nm, respectively. The spectra characteristics of ZnS:Pr,Ce,F films show white spectrum that covered a whole visible wavelength. One of the effects of an additional surface layer of indium tin oxide on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength as well as low voltage emission, as compared to our phosphor film without the surface conductive layer.

Original languageEnglish
Pages (from-to)512-515
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume15
Issue number2
Publication statusPublished - 1997 Mar 1
Externally publishedYes

Fingerprint

Field emission displays
Physical vapor deposition
Phosphors
phosphors
field emission
vapor deposition
Thin films
thin films
Wavelength
Cathodoluminescence
cathodoluminescence
Tin oxides
wavelengths
indium oxides
Magnetron sputtering
Indium
low voltage
tin oxides
Electron beams
surface layers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Thin film phosphor prepared by physical vapor deposition for field emission display application. / Lee, Yun-Hi; Song, Man H.; Ju, Byeong Kwon; Shin, Dong K.; Oh, Myung Hwan.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 2, 01.03.1997, p. 512-515.

Research output: Contribution to journalArticle

@article{1456909f22204ba5a68b498572377cfb,
title = "Thin film phosphor prepared by physical vapor deposition for field emission display application",
abstract = "We fabricated very thin ZnO:Zn film using rf magnetron sputtering and ZnS:Pr.Ce layer by electron-beam evaporation for color field emission display application. Also, in order to investigate the influence of surface conductive layer onto the phosphor films upon the emission characteristics, we prepared the layered structures having an additional conducting layer of 2-6-nm-thick Sn-doped In2O3 film. Cathodoluminescence spectrum of sputtered ZnO:Zn (250 nm) film shows two broad peaks centered around 540 and 600 nm, respectively. The spectra characteristics of ZnS:Pr,Ce,F films show white spectrum that covered a whole visible wavelength. One of the effects of an additional surface layer of indium tin oxide on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength as well as low voltage emission, as compared to our phosphor film without the surface conductive layer.",
author = "Yun-Hi Lee and Song, {Man H.} and Ju, {Byeong Kwon} and Shin, {Dong K.} and Oh, {Myung Hwan}",
year = "1997",
month = "3",
day = "1",
language = "English",
volume = "15",
pages = "512--515",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "2",

}

TY - JOUR

T1 - Thin film phosphor prepared by physical vapor deposition for field emission display application

AU - Lee, Yun-Hi

AU - Song, Man H.

AU - Ju, Byeong Kwon

AU - Shin, Dong K.

AU - Oh, Myung Hwan

PY - 1997/3/1

Y1 - 1997/3/1

N2 - We fabricated very thin ZnO:Zn film using rf magnetron sputtering and ZnS:Pr.Ce layer by electron-beam evaporation for color field emission display application. Also, in order to investigate the influence of surface conductive layer onto the phosphor films upon the emission characteristics, we prepared the layered structures having an additional conducting layer of 2-6-nm-thick Sn-doped In2O3 film. Cathodoluminescence spectrum of sputtered ZnO:Zn (250 nm) film shows two broad peaks centered around 540 and 600 nm, respectively. The spectra characteristics of ZnS:Pr,Ce,F films show white spectrum that covered a whole visible wavelength. One of the effects of an additional surface layer of indium tin oxide on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength as well as low voltage emission, as compared to our phosphor film without the surface conductive layer.

AB - We fabricated very thin ZnO:Zn film using rf magnetron sputtering and ZnS:Pr.Ce layer by electron-beam evaporation for color field emission display application. Also, in order to investigate the influence of surface conductive layer onto the phosphor films upon the emission characteristics, we prepared the layered structures having an additional conducting layer of 2-6-nm-thick Sn-doped In2O3 film. Cathodoluminescence spectrum of sputtered ZnO:Zn (250 nm) film shows two broad peaks centered around 540 and 600 nm, respectively. The spectra characteristics of ZnS:Pr,Ce,F films show white spectrum that covered a whole visible wavelength. One of the effects of an additional surface layer of indium tin oxide on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength as well as low voltage emission, as compared to our phosphor film without the surface conductive layer.

UR - http://www.scopus.com/inward/record.url?scp=0000548799&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000548799&partnerID=8YFLogxK

M3 - Article

VL - 15

SP - 512

EP - 515

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 2

ER -