Thin film phosphor prepared by physical vapour deposition for FED application

Yun-Hi Lee, Man Ho Song, Byeong Kwon Ju, Myung Hwan Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We fabricated ZnO:Zn film by rf magnetron sputtering and ZnS:Pr,Ce layer by electron-beam evaporation for color FED application. Also, in order to investigate influence of surface conductivity of phosphor film on the threshold voltage of emission, we fabricated two different kinds of layered structures having an additional conducting layer such as 5 nm thick Sn-doped In2O3 film. CL emission spectrum of sputtered ZnO:Zn (250 nm) film shows a two broad peaks centered 540 nm and 600 nm. The spectra characteristics of ZnS:Pr,Ce films shows white spectrum that covered a whole visible wavelength. One of the effect of an additional surface layer of ITO on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages619-622
Number of pages4
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

Fingerprint

phosphors
vapor deposition
thin films
ITO (semiconductors)
wavelengths
threshold voltage
surface layers
magnetron sputtering
emission spectra
evaporation
electron beams
color
conduction
conductivity
shift

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Lee, Y-H., Song, M. H., Ju, B. K., & Oh, M. H. (1996). Thin film phosphor prepared by physical vapour deposition for FED application. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 619-622). Piscataway, NJ, United States: IEEE.

Thin film phosphor prepared by physical vapour deposition for FED application. / Lee, Yun-Hi; Song, Man Ho; Ju, Byeong Kwon; Oh, Myung Hwan.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. p. 619-622.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, Y-H, Song, MH, Ju, BK & Oh, MH 1996, Thin film phosphor prepared by physical vapour deposition for FED application. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 619-622, Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, 96/7/7.
Lee Y-H, Song MH, Ju BK, Oh MH. Thin film phosphor prepared by physical vapour deposition for FED application. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States: IEEE. 1996. p. 619-622
Lee, Yun-Hi ; Song, Man Ho ; Ju, Byeong Kwon ; Oh, Myung Hwan. / Thin film phosphor prepared by physical vapour deposition for FED application. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. pp. 619-622
@inproceedings{f6f322938ba847cf895ba7cc25c92a45,
title = "Thin film phosphor prepared by physical vapour deposition for FED application",
abstract = "We fabricated ZnO:Zn film by rf magnetron sputtering and ZnS:Pr,Ce layer by electron-beam evaporation for color FED application. Also, in order to investigate influence of surface conductivity of phosphor film on the threshold voltage of emission, we fabricated two different kinds of layered structures having an additional conducting layer such as 5 nm thick Sn-doped In2O3 film. CL emission spectrum of sputtered ZnO:Zn (250 nm) film shows a two broad peaks centered 540 nm and 600 nm. The spectra characteristics of ZnS:Pr,Ce films shows white spectrum that covered a whole visible wavelength. One of the effect of an additional surface layer of ITO on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength.",
author = "Yun-Hi Lee and Song, {Man Ho} and Ju, {Byeong Kwon} and Oh, {Myung Hwan}",
year = "1996",
month = "12",
day = "1",
language = "English",
pages = "619--622",
booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",
publisher = "IEEE",

}

TY - GEN

T1 - Thin film phosphor prepared by physical vapour deposition for FED application

AU - Lee, Yun-Hi

AU - Song, Man Ho

AU - Ju, Byeong Kwon

AU - Oh, Myung Hwan

PY - 1996/12/1

Y1 - 1996/12/1

N2 - We fabricated ZnO:Zn film by rf magnetron sputtering and ZnS:Pr,Ce layer by electron-beam evaporation for color FED application. Also, in order to investigate influence of surface conductivity of phosphor film on the threshold voltage of emission, we fabricated two different kinds of layered structures having an additional conducting layer such as 5 nm thick Sn-doped In2O3 film. CL emission spectrum of sputtered ZnO:Zn (250 nm) film shows a two broad peaks centered 540 nm and 600 nm. The spectra characteristics of ZnS:Pr,Ce films shows white spectrum that covered a whole visible wavelength. One of the effect of an additional surface layer of ITO on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength.

AB - We fabricated ZnO:Zn film by rf magnetron sputtering and ZnS:Pr,Ce layer by electron-beam evaporation for color FED application. Also, in order to investigate influence of surface conductivity of phosphor film on the threshold voltage of emission, we fabricated two different kinds of layered structures having an additional conducting layer such as 5 nm thick Sn-doped In2O3 film. CL emission spectrum of sputtered ZnO:Zn (250 nm) film shows a two broad peaks centered 540 nm and 600 nm. The spectra characteristics of ZnS:Pr,Ce films shows white spectrum that covered a whole visible wavelength. One of the effect of an additional surface layer of ITO on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength.

UR - http://www.scopus.com/inward/record.url?scp=0030361128&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030361128&partnerID=8YFLogxK

M3 - Conference contribution

SP - 619

EP - 622

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

PB - IEEE

CY - Piscataway, NJ, United States

ER -