Thin film silicon substrate formation using electrochemical anodic etching method

J. H. Kwon, S. H. Lee, Byeong Kwon Ju

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/ deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26-5%) and high (86-3%) porosity layers were formed by ECA at 1-5mAcm -2 and 100 mA cm-2 for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology.

Original languageEnglish
Pages (from-to)603-605
Number of pages3
JournalSurface Engineering
Volume25
Issue number8
DOIs
Publication statusPublished - 2009 Nov 1

Fingerprint

Porous silicon
Silicon
Etching
etching
Thin films
silicon
Substrates
thin films
Porosity
porous silicon
Hydrofluoric Acid
Monocrystalline silicon
Hydrofluoric acid
Deionized water
Silicon wafers
Ethanol
Current density
porosity
hydrofluoric acid
Substrate

Keywords

  • Anodisation
  • Electrochemical etching
  • Layer transfer
  • Porous silicon

ASJC Scopus subject areas

  • Surfaces and Interfaces
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Conservation

Cite this

Thin film silicon substrate formation using electrochemical anodic etching method. / Kwon, J. H.; Lee, S. H.; Ju, Byeong Kwon.

In: Surface Engineering, Vol. 25, No. 8, 01.11.2009, p. 603-605.

Research output: Contribution to journalArticle

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