Thin film silicon substrate formation using electrochemical anodic etching method

J. H. Kwon, S. H. Lee, B. K. Ju

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/ deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26-5%) and high (86-3%) porosity layers were formed by ECA at 1-5mAcm -2 and 100 mA cm-2 for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology.

Original languageEnglish
Pages (from-to)603-605
Number of pages3
JournalSurface Engineering
Volume25
Issue number8
DOIs
Publication statusPublished - 2009 Nov

Keywords

  • Anodisation
  • Electrochemical etching
  • Layer transfer
  • Porous silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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