Thin films of insoluble poly(oligothienylene vinylenes) prepared by chemical vapor deposition polymerization

Sung Hoon Joo; Chun Young Lee; Donghyuk Park; Jinsoo Joo; Jung Il Jin

doi:10.1002/adfm.200600404

Thin films of insoluble poly(oligothienylene vinylenes) prepared by chemical vapor deposition polymerization

Sung Hoon Joo, Chun Young Lee, Donghyuk Park, Jinsoo Joo, Jung Il Jin

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A series of poly(oligothienylene vinylenes) (PT_mVs, m = 2-4) with a varying number of consecutively bound thienylene rings are successfully prepared in thin films by chemical vapor deposition polymerization (CVDP) using the corresponding bis(halomethyl)thiophenes as starting materials. The chemical and electronic structures are studied spectroscopically and also by cyclic voltammetry. Top-gate field-effect transistors are fabricated by two consecutive CVDP cycles of PT_mV and poly(p-xylylene) followed by the deposition of a Au gate electrode. In the case of a PT₃V active layer, a field-effect mobility value of 0.5 × 10^-4 cm²V ^_1 s^-1 is obtained.

Original language	English
Pages (from-to)	2174-2179
Number of pages	6
Journal	Advanced Functional Materials
Volume	17
Issue number	13
DOIs	https://doi.org/10.1002/adfm.200600404
Publication status	Published - 2007 Sept 3

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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abstract = "A series of poly(oligothienylene vinylenes) (PTmVs, m = 2-4) with a varying number of consecutively bound thienylene rings are successfully prepared in thin films by chemical vapor deposition polymerization (CVDP) using the corresponding bis(halomethyl)thiophenes as starting materials. The chemical and electronic structures are studied spectroscopically and also by cyclic voltammetry. Top-gate field-effect transistors are fabricated by two consecutive CVDP cycles of PTmV and poly(p-xylylene) followed by the deposition of a Au gate electrode. In the case of a PT3V active layer, a field-effect mobility value of 0.5 × 10-4 cm2V _1 s-1 is obtained.",

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AU - Joo, Sung Hoon

AU - Lee, Chun Young

AU - Park, Donghyuk

AU - Joo, Jinsoo

AU - Jin, Jung Il

PY - 2007/9/3

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AB - A series of poly(oligothienylene vinylenes) (PTmVs, m = 2-4) with a varying number of consecutively bound thienylene rings are successfully prepared in thin films by chemical vapor deposition polymerization (CVDP) using the corresponding bis(halomethyl)thiophenes as starting materials. The chemical and electronic structures are studied spectroscopically and also by cyclic voltammetry. Top-gate field-effect transistors are fabricated by two consecutive CVDP cycles of PTmV and poly(p-xylylene) followed by the deposition of a Au gate electrode. In the case of a PT3V active layer, a field-effect mobility value of 0.5 × 10-4 cm2V _1 s-1 is obtained.

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Thin films of insoluble poly(oligothienylene vinylenes) prepared by chemical vapor deposition polymerization

Abstract

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