Three-dimensional crystalline Si film growth by the Ni silicide mediation

Joondong Kim, Chang-Soo Han, Yun Chang Park, Wayne A. Anderson

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Three-dimensional crystalline Si films were grown by the Ni silicide mediation. The metal-induced growth method, which is a spontaneous reaction of metal and silicon, forms a silicide layer first then induces the crystalline Si growth. By controlling the reaction between Ni and Si, the silicide formation was modulated. The Ni Si2 migration crystallizes a Si film behind and mediates crystalline Si above it. The mechanism of silicide-mediated three-dimensional Si crystallization and the thin Si film Schottky photodiode are presented.

Original languageEnglish
Article number043501
JournalApplied Physics Letters
Volume92
Issue number4
DOIs
Publication statusPublished - 2008 Feb 8
Externally publishedYes

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mediation
metals
photodiodes
crystallization
silicon
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Three-dimensional crystalline Si film growth by the Ni silicide mediation. / Kim, Joondong; Han, Chang-Soo; Park, Yun Chang; Anderson, Wayne A.

In: Applied Physics Letters, Vol. 92, No. 4, 043501, 08.02.2008.

Research output: Contribution to journalArticle

Kim, Joondong ; Han, Chang-Soo ; Park, Yun Chang ; Anderson, Wayne A. / Three-dimensional crystalline Si film growth by the Ni silicide mediation. In: Applied Physics Letters. 2008 ; Vol. 92, No. 4.
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