Three-dimensional integration of organic resistive memory devices

Sunghoon Song, Byungjin Cho, Tae Wook Kim, Yongsung Ji, Minseok Jo, Gunuk Wang, Minhyeok Choe, Yung Ho Kahng, Hyunsang Hwang, Takhee Lee

Research output: Contribution to journalArticle

168 Citations (Scopus)

Abstract

Organic memory: Our three-dimensionally (3D) stacked 8 × 8 cross-bar array organic resistive memory devices showed non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.

Original languageEnglish
Pages (from-to)5048-5052
Number of pages5
JournalAdvanced Materials
Volume22
Issue number44
DOIs
Publication statusPublished - 2010 Nov 24
Externally publishedYes

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Keywords

  • 3-dimensional stacking
  • Non-volatile memory
  • Organic electronics
  • Organic memory

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Song, S., Cho, B., Kim, T. W., Ji, Y., Jo, M., Wang, G., ... Lee, T. (2010). Three-dimensional integration of organic resistive memory devices. Advanced Materials, 22(44), 5048-5052. https://doi.org/10.1002/adma.201002575

Three-dimensional integration of organic resistive memory devices. / Song, Sunghoon; Cho, Byungjin; Kim, Tae Wook; Ji, Yongsung; Jo, Minseok; Wang, Gunuk; Choe, Minhyeok; Kahng, Yung Ho; Hwang, Hyunsang; Lee, Takhee.

In: Advanced Materials, Vol. 22, No. 44, 24.11.2010, p. 5048-5052.

Research output: Contribution to journalArticle

Song, S, Cho, B, Kim, TW, Ji, Y, Jo, M, Wang, G, Choe, M, Kahng, YH, Hwang, H & Lee, T 2010, 'Three-dimensional integration of organic resistive memory devices', Advanced Materials, vol. 22, no. 44, pp. 5048-5052. https://doi.org/10.1002/adma.201002575
Song, Sunghoon ; Cho, Byungjin ; Kim, Tae Wook ; Ji, Yongsung ; Jo, Minseok ; Wang, Gunuk ; Choe, Minhyeok ; Kahng, Yung Ho ; Hwang, Hyunsang ; Lee, Takhee. / Three-dimensional integration of organic resistive memory devices. In: Advanced Materials. 2010 ; Vol. 22, No. 44. pp. 5048-5052.
@article{5e0b51681d4948a49546ef2a30e49db0,
title = "Three-dimensional integration of organic resistive memory devices",
abstract = "Organic memory: Our three-dimensionally (3D) stacked 8 × 8 cross-bar array organic resistive memory devices showed non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.",
keywords = "3-dimensional stacking, Non-volatile memory, Organic electronics, Organic memory",
author = "Sunghoon Song and Byungjin Cho and Kim, {Tae Wook} and Yongsung Ji and Minseok Jo and Gunuk Wang and Minhyeok Choe and Kahng, {Yung Ho} and Hyunsang Hwang and Takhee Lee",
year = "2010",
month = "11",
day = "24",
doi = "10.1002/adma.201002575",
language = "English",
volume = "22",
pages = "5048--5052",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "44",

}

TY - JOUR

T1 - Three-dimensional integration of organic resistive memory devices

AU - Song, Sunghoon

AU - Cho, Byungjin

AU - Kim, Tae Wook

AU - Ji, Yongsung

AU - Jo, Minseok

AU - Wang, Gunuk

AU - Choe, Minhyeok

AU - Kahng, Yung Ho

AU - Hwang, Hyunsang

AU - Lee, Takhee

PY - 2010/11/24

Y1 - 2010/11/24

N2 - Organic memory: Our three-dimensionally (3D) stacked 8 × 8 cross-bar array organic resistive memory devices showed non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.

AB - Organic memory: Our three-dimensionally (3D) stacked 8 × 8 cross-bar array organic resistive memory devices showed non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.

KW - 3-dimensional stacking

KW - Non-volatile memory

KW - Organic electronics

KW - Organic memory

UR - http://www.scopus.com/inward/record.url?scp=78649854244&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649854244&partnerID=8YFLogxK

U2 - 10.1002/adma.201002575

DO - 10.1002/adma.201002575

M3 - Article

C2 - 20839254

AN - SCOPUS:78649854244

VL - 22

SP - 5048

EP - 5052

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 44

ER -