Three-dimensional integration of organic resistive memory devices

Sunghoon Song, Byungjin Cho, Tae Wook Kim, Yongsung Ji, Minseok Jo, Gunuk Wang, Minhyeok Choe, Yung Ho Kahng, Hyunsang Hwang, Takhee Lee

Research output: Contribution to journalArticlepeer-review

197 Citations (Scopus)


Organic memory: Our three-dimensionally (3D) stacked 8 × 8 cross-bar array organic resistive memory devices showed non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.

Original languageEnglish
Pages (from-to)5048-5052
Number of pages5
JournalAdvanced Materials
Issue number44
Publication statusPublished - 2010 Nov 24
Externally publishedYes


  • 3-dimensional stacking
  • Non-volatile memory
  • Organic electronics
  • Organic memory

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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