Three-dimensional integration of organic resistive memory devices

Sunghoon Song, Byungjin Cho, Tae Wook Kim, Yongsung Ji, Minseok Jo, Gunuk Wang, Minhyeok Choe, Yung Ho Kahng, Hyunsang Hwang, Takhee Lee

Research output: Contribution to journalArticle

174 Citations (Scopus)

Abstract

Organic memory: Our three-dimensionally (3D) stacked 8 × 8 cross-bar array organic resistive memory devices showed non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.

Original languageEnglish
Pages (from-to)5048-5052
Number of pages5
JournalAdvanced Materials
Volume22
Issue number44
DOIs
Publication statusPublished - 2010 Nov 24
Externally publishedYes

Keywords

  • 3-dimensional stacking
  • Non-volatile memory
  • Organic electronics
  • Organic memory

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Song, S., Cho, B., Kim, T. W., Ji, Y., Jo, M., Wang, G., Choe, M., Kahng, Y. H., Hwang, H., & Lee, T. (2010). Three-dimensional integration of organic resistive memory devices. Advanced Materials, 22(44), 5048-5052. https://doi.org/10.1002/adma.201002575