Three-Dimensional Networked Nanoporous Ta2O5-x Memory System for Ultrahigh Density Storage

Gunuk Wang, Jae Hwang Lee, Yang Yang, Gedeng Ruan, Nam Dong Kim, Yongsung Ji, James M. Tour

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Oxide-based resistive memory systems have high near-term promise for use in nonvolatile memory. Here we introduce a memory system employing a three-dimensional (3D) networked nanoporous (NP) Ta2O5-x structure and graphene for ultrahigh density storage. The devices exhibit a self-embedded highly nonlinear I-V switching behavior with an extremely low leakage current (on the order of pA) and good endurance. Calculations indicated that this memory architecture could be scaled up to a ∼162 Gbit crossbar array without the need for selectors or diodes normally used in crossbar arrays. In addition, we demonstrate that the voltage point for a minimum current is systematically controlled by the applied set voltage, thereby offering a broad range of switching characteristics. The potential switching mechanism is suggested based upon the transformation from Schottky to Ohmic-like contacts, and vice versa, depending on the movement of oxygen vacancies at the interfaces induced by the voltage polarity, and the formation of oxygen ions in the pores by the electric field.

Original languageEnglish
Pages (from-to)6009-6014
Number of pages6
JournalNano Letters
Volume15
Issue number9
DOIs
Publication statusPublished - 2015 Sep 9

Fingerprint

Computer systems
Data storage equipment
Electric potential
Memory architecture
electric potential
Graphite
Oxygen vacancies
Leakage currents
selectors
Oxides
Graphene
endurance
Diodes
Durability
oxygen ions
Electric fields
Ions
Oxygen
polarity
graphene

Keywords

  • Nanoporous
  • nonvolatile memory
  • resistive memory
  • Ta<inf>2</inf>O<inf>5-x</inf>
  • tantalum oxide

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Three-Dimensional Networked Nanoporous Ta2O5-x Memory System for Ultrahigh Density Storage. / Wang, Gunuk; Lee, Jae Hwang; Yang, Yang; Ruan, Gedeng; Kim, Nam Dong; Ji, Yongsung; Tour, James M.

In: Nano Letters, Vol. 15, No. 9, 09.09.2015, p. 6009-6014.

Research output: Contribution to journalArticle

Wang, Gunuk ; Lee, Jae Hwang ; Yang, Yang ; Ruan, Gedeng ; Kim, Nam Dong ; Ji, Yongsung ; Tour, James M. / Three-Dimensional Networked Nanoporous Ta2O5-x Memory System for Ultrahigh Density Storage. In: Nano Letters. 2015 ; Vol. 15, No. 9. pp. 6009-6014.
@article{2489739d251e4d4f8d77cbfe6e344c24,
title = "Three-Dimensional Networked Nanoporous Ta2O5-x Memory System for Ultrahigh Density Storage",
abstract = "Oxide-based resistive memory systems have high near-term promise for use in nonvolatile memory. Here we introduce a memory system employing a three-dimensional (3D) networked nanoporous (NP) Ta2O5-x structure and graphene for ultrahigh density storage. The devices exhibit a self-embedded highly nonlinear I-V switching behavior with an extremely low leakage current (on the order of pA) and good endurance. Calculations indicated that this memory architecture could be scaled up to a ∼162 Gbit crossbar array without the need for selectors or diodes normally used in crossbar arrays. In addition, we demonstrate that the voltage point for a minimum current is systematically controlled by the applied set voltage, thereby offering a broad range of switching characteristics. The potential switching mechanism is suggested based upon the transformation from Schottky to Ohmic-like contacts, and vice versa, depending on the movement of oxygen vacancies at the interfaces induced by the voltage polarity, and the formation of oxygen ions in the pores by the electric field.",
keywords = "Nanoporous, nonvolatile memory, resistive memory, Ta<inf>2</inf>O<inf>5-x</inf>, tantalum oxide",
author = "Gunuk Wang and Lee, {Jae Hwang} and Yang Yang and Gedeng Ruan and Kim, {Nam Dong} and Yongsung Ji and Tour, {James M.}",
year = "2015",
month = "9",
day = "9",
doi = "10.1021/acs.nanolett.5b02190",
language = "English",
volume = "15",
pages = "6009--6014",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "9",

}

TY - JOUR

T1 - Three-Dimensional Networked Nanoporous Ta2O5-x Memory System for Ultrahigh Density Storage

AU - Wang, Gunuk

AU - Lee, Jae Hwang

AU - Yang, Yang

AU - Ruan, Gedeng

AU - Kim, Nam Dong

AU - Ji, Yongsung

AU - Tour, James M.

PY - 2015/9/9

Y1 - 2015/9/9

N2 - Oxide-based resistive memory systems have high near-term promise for use in nonvolatile memory. Here we introduce a memory system employing a three-dimensional (3D) networked nanoporous (NP) Ta2O5-x structure and graphene for ultrahigh density storage. The devices exhibit a self-embedded highly nonlinear I-V switching behavior with an extremely low leakage current (on the order of pA) and good endurance. Calculations indicated that this memory architecture could be scaled up to a ∼162 Gbit crossbar array without the need for selectors or diodes normally used in crossbar arrays. In addition, we demonstrate that the voltage point for a minimum current is systematically controlled by the applied set voltage, thereby offering a broad range of switching characteristics. The potential switching mechanism is suggested based upon the transformation from Schottky to Ohmic-like contacts, and vice versa, depending on the movement of oxygen vacancies at the interfaces induced by the voltage polarity, and the formation of oxygen ions in the pores by the electric field.

AB - Oxide-based resistive memory systems have high near-term promise for use in nonvolatile memory. Here we introduce a memory system employing a three-dimensional (3D) networked nanoporous (NP) Ta2O5-x structure and graphene for ultrahigh density storage. The devices exhibit a self-embedded highly nonlinear I-V switching behavior with an extremely low leakage current (on the order of pA) and good endurance. Calculations indicated that this memory architecture could be scaled up to a ∼162 Gbit crossbar array without the need for selectors or diodes normally used in crossbar arrays. In addition, we demonstrate that the voltage point for a minimum current is systematically controlled by the applied set voltage, thereby offering a broad range of switching characteristics. The potential switching mechanism is suggested based upon the transformation from Schottky to Ohmic-like contacts, and vice versa, depending on the movement of oxygen vacancies at the interfaces induced by the voltage polarity, and the formation of oxygen ions in the pores by the electric field.

KW - Nanoporous

KW - nonvolatile memory

KW - resistive memory

KW - Ta<inf>2</inf>O<inf>5-x</inf>

KW - tantalum oxide

UR - http://www.scopus.com/inward/record.url?scp=84941093453&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84941093453&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.5b02190

DO - 10.1021/acs.nanolett.5b02190

M3 - Article

VL - 15

SP - 6009

EP - 6014

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 9

ER -