Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors

Chang Yong Choi, Won Ju Cho, Sang Mo Koo, Sangsig Kim, Qiliang Li, John S. Suehle, Curt A. Richter, Eric M. Vogel

Research output: Contribution to journalArticle

Abstract

In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional and three-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L and thickness t but varying the channel width W from 5 nm and 5 μm. By evaluating the charge distributions and the current flowlines of both the two- and three-dimensional structures, we have shown that the increase in the 'on state' conduction current in the SiNW channel is a dominant factor, which consequently results in more than a two order of magnitude improvement in the on/off current ratio.

Original languageEnglish
Pages (from-to)1680-1684
Number of pages5
JournalJournal of the Korean Physical Society
Volume53
Issue number3
DOIs
Publication statusPublished - 2008 Sep

Keywords

  • Nanowire
  • On/off current ratio
  • SiNWFET
  • Simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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