Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors

Chang Yong Choi, Won Ju Cho, Sang Mo Koo, Sangsig Kim, Qiliang Li, John S. Suehle, Curt A. Richter, Eric M. Vogel

Research output: Contribution to journalArticle

Abstract

In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional and three-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L and thickness t but varying the channel width W from 5 nm and 5 μm. By evaluating the charge distributions and the current flowlines of both the two- and three-dimensional structures, we have shown that the increase in the 'on state' conduction current in the SiNW channel is a dominant factor, which consequently results in more than a two order of magnitude improvement in the on/off current ratio.

Original languageEnglish
Pages (from-to)1680-1684
Number of pages5
JournalJournal of the Korean Physical Society
Volume53
Issue number3
Publication statusPublished - 2008 Sep 1

Fingerprint

nanowires
field effect transistors
silicon
simulation
charge distribution
conduction
geometry

Keywords

  • Nanowire
  • On/off current ratio
  • Simulation
  • SiNWFET

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors. / Choi, Chang Yong; Cho, Won Ju; Koo, Sang Mo; Kim, Sangsig; Li, Qiliang; Suehle, John S.; Richter, Curt A.; Vogel, Eric M.

In: Journal of the Korean Physical Society, Vol. 53, No. 3, 01.09.2008, p. 1680-1684.

Research output: Contribution to journalArticle

Choi, CY, Cho, WJ, Koo, SM, Kim, S, Li, Q, Suehle, JS, Richter, CA & Vogel, EM 2008, 'Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors', Journal of the Korean Physical Society, vol. 53, no. 3, pp. 1680-1684.
Choi, Chang Yong ; Cho, Won Ju ; Koo, Sang Mo ; Kim, Sangsig ; Li, Qiliang ; Suehle, John S. ; Richter, Curt A. ; Vogel, Eric M. / Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors. In: Journal of the Korean Physical Society. 2008 ; Vol. 53, No. 3. pp. 1680-1684.
@article{457c417c3a854cb68b420a5192061f30,
title = "Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors",
abstract = "In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional and three-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L and thickness t but varying the channel width W from 5 nm and 5 μm. By evaluating the charge distributions and the current flowlines of both the two- and three-dimensional structures, we have shown that the increase in the 'on state' conduction current in the SiNW channel is a dominant factor, which consequently results in more than a two order of magnitude improvement in the on/off current ratio.",
keywords = "Nanowire, On/off current ratio, Simulation, SiNWFET",
author = "Choi, {Chang Yong} and Cho, {Won Ju} and Koo, {Sang Mo} and Sangsig Kim and Qiliang Li and Suehle, {John S.} and Richter, {Curt A.} and Vogel, {Eric M.}",
year = "2008",
month = "9",
day = "1",
language = "English",
volume = "53",
pages = "1680--1684",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "3",

}

TY - JOUR

T1 - Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors

AU - Choi, Chang Yong

AU - Cho, Won Ju

AU - Koo, Sang Mo

AU - Kim, Sangsig

AU - Li, Qiliang

AU - Suehle, John S.

AU - Richter, Curt A.

AU - Vogel, Eric M.

PY - 2008/9/1

Y1 - 2008/9/1

N2 - In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional and three-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L and thickness t but varying the channel width W from 5 nm and 5 μm. By evaluating the charge distributions and the current flowlines of both the two- and three-dimensional structures, we have shown that the increase in the 'on state' conduction current in the SiNW channel is a dominant factor, which consequently results in more than a two order of magnitude improvement in the on/off current ratio.

AB - In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional and three-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L and thickness t but varying the channel width W from 5 nm and 5 μm. By evaluating the charge distributions and the current flowlines of both the two- and three-dimensional structures, we have shown that the increase in the 'on state' conduction current in the SiNW channel is a dominant factor, which consequently results in more than a two order of magnitude improvement in the on/off current ratio.

KW - Nanowire

KW - On/off current ratio

KW - Simulation

KW - SiNWFET

UR - http://www.scopus.com/inward/record.url?scp=53549124378&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=53549124378&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:53549124378

VL - 53

SP - 1680

EP - 1684

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 3

ER -