Abstract
Three-stage InP JFET amplifiers have been fabricated on semiinsulating InP using ion implantation. The amplifiers show dc gain of 43-65 calculated from amplifier transfer characteristics. From high-frequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers.
Original language | English |
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Pages (from-to) | 407-408 |
Number of pages | 2 |
Journal | IEEE Photonics Technology Letters |
Volume | 2 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1990 Jun |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering