Three-Stage InP JFET Amplifier for Receiver Optoelectronic Integrated Circuits

Jichai Jeong, G. P. Vella-Coleiro, Sung J. Kim, James Eng

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Three-stage InP JFET amplifiers have been fabricated on semiinsulating InP using ion implantation. The amplifiers show dc gain of 43-65 calculated from amplifier transfer characteristics. From high-frequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers.

Original languageEnglish
Pages (from-to)407-408
Number of pages2
JournalIEEE Photonics Technology Letters
Volume2
Issue number6
DOIs
Publication statusPublished - 1990 Jun

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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