Three-Stage InP JFET Amplifier for Receiver Optoelectronic Integrated Circuits

Jichai Jeong; G. P. Vella-Coleiro; Sung J. Kim; James Eng

doi:10.1109/68.56601

Three-Stage InP JFET Amplifier for Receiver Optoelectronic Integrated Circuits

Jichai Jeong, G. P. Vella-Coleiro, Sung J. Kim, James Eng

Department of Brain and Cognitive Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Three-stage InP JFET amplifiers have been fabricated on semiinsulating InP using ion implantation. The amplifiers show dc gain of 43-65 calculated from amplifier transfer characteristics. From high-frequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers.

Original language	English
Pages (from-to)	407-408
Number of pages	2
Journal	IEEE Photonics Technology Letters
Volume	2
Issue number	6
DOIs	https://doi.org/10.1109/68.56601
Publication status	Published - 1990 Jun

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/68.56601

Cite this

@article{2e13990308104c3ca7b6c3e71940489b,

title = "Three-Stage InP JFET Amplifier for Receiver Optoelectronic Integrated Circuits",

abstract = "Three-stage InP JFET amplifiers have been fabricated on semiinsulating InP using ion implantation. The amplifiers show dc gain of 43-65 calculated from amplifier transfer characteristics. From high-frequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers.",

author = "Jichai Jeong and Vella-Coleiro, {G. P.} and Kim, {Sung J.} and James Eng",

year = "1990",

month = jun,

doi = "10.1109/68.56601",

language = "English",

volume = "2",

pages = "407--408",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Three-Stage InP JFET Amplifier for Receiver Optoelectronic Integrated Circuits

AU - Jeong, Jichai

AU - Vella-Coleiro, G. P.

AU - Kim, Sung J.

AU - Eng, James

PY - 1990/6

Y1 - 1990/6

N2 - Three-stage InP JFET amplifiers have been fabricated on semiinsulating InP using ion implantation. The amplifiers show dc gain of 43-65 calculated from amplifier transfer characteristics. From high-frequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers.

AB - Three-stage InP JFET amplifiers have been fabricated on semiinsulating InP using ion implantation. The amplifiers show dc gain of 43-65 calculated from amplifier transfer characteristics. From high-frequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers.

UR - http://www.scopus.com/inward/record.url?scp=0025447056&partnerID=8YFLogxK

U2 - 10.1109/68.56601

DO - 10.1109/68.56601

M3 - Article

AN - SCOPUS:0025447056

VL - 2

SP - 407

EP - 408

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 6

ER -

Three-Stage InP JFET Amplifier for Receiver Optoelectronic Integrated Circuits

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this