Three-Stage InP JFET Amplifier for Receiver Optoelectronic Integrated Circuits

Jichai Jeong; G. P. Vella-Coleiro; Sung J. Kim; James Eng

doi:10.1109/68.56601

Three-Stage InP JFET Amplifier for Receiver Optoelectronic Integrated Circuits

Jichai Jeong, G. P. Vella-Coleiro, Sung J. Kim, James Eng

Department of Brain and Cognitive Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Three-stage InP JFET amplifiers have been fabricated on semiinsulating InP using ion implantation. The amplifiers show dc gain of 43-65 calculated from amplifier transfer characteristics. From high-frequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers.

Original language	English
Pages (from-to)	407-408
Number of pages	2
Journal	IEEE Photonics Technology Letters
Volume	2
Issue number	6
DOIs	https://doi.org/10.1109/68.56601
Publication status	Published - 1990 Jun

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Three-Stage InP JFET Amplifier for Receiver Optoelectronic Integrated Circuits",

abstract = "Three-stage InP JFET amplifiers have been fabricated on semiinsulating InP using ion implantation. The amplifiers show dc gain of 43-65 calculated from amplifier transfer characteristics. From high-frequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers.",

author = "Jichai Jeong and Vella-Coleiro, {G. P.} and Kim, {Sung J.} and James Eng",

year = "1990",

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AB - Three-stage InP JFET amplifiers have been fabricated on semiinsulating InP using ion implantation. The amplifiers show dc gain of 43-65 calculated from amplifier transfer characteristics. From high-frequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers.

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Three-Stage InP JFET Amplifier for Receiver Optoelectronic Integrated Circuits

Abstract

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