Abstract
Three-stage InP JFET amplifiers have been fabricated on semiinsulating InP using ion implantation. The amplifiers show dc gain of 43-65 calculated from amplifier transfer characteristics. From high-frequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers.
| Original language | English |
|---|---|
| Pages (from-to) | 407-408 |
| Number of pages | 2 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 2 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1990 Jun |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Jeong, J., Vella-Coleiro, G. P., Kim, S. J., & Eng, J. (1990). Three-Stage InP JFET Amplifier for Receiver Optoelectronic Integrated Circuits. IEEE Photonics Technology Letters, 2(6), 407-408. https://doi.org/10.1109/68.56601