Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect

Ki Seung Lee, Seo Won Lee, Byoung Chul Min, Kyoung Jin Lee

Research output: Contribution to journalArticle

132 Citations (Scopus)

Abstract

We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that in the high damping regime, the threshold switching current is independent of the damping constant and is almost linearly proportional to both effective perpendicular magnetic anisotropy field and external in-plane field applied along the current direction. We obtain an analytic expression of the threshold current, in excellent agreement with numerical results. Based on the expression, we find that magnetization switching induced by the spin Hall effect can be practically useful when it is combined with voltage-controlled anisotropy change.

Original languageEnglish
Article number112410
JournalApplied Physics Letters
Volume102
Issue number11
DOIs
Publication statusPublished - 2013 Mar 18

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threshold currents
Hall effect
damping
anisotropy
magnetization
thresholds
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect. / Lee, Ki Seung; Lee, Seo Won; Min, Byoung Chul; Lee, Kyoung Jin.

In: Applied Physics Letters, Vol. 102, No. 11, 112410, 18.03.2013.

Research output: Contribution to journalArticle

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