Threshold voltage shift by controlling Ga in solution processed Si-In-Zn-O thin film transistors

Jun Young Choi, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The threshold voltage change of solution processed gallium-silicon-indium- zinc oxide (GSIZO) thin film transistors (TFTs) annealed at 200 °C has been investigated depending on gallium ratio. GSIZO thin films were formed with various gallium ratios from 0.01 to 1 M ratio. The 30 nm-thick GSIZO film exhibited optimized electrical characteristics, such as field effect mobility (μ FE) of 2.2 × 10 - 2 cm 2/V•s, subthreshold swing (S.S) of 0.11 V/dec, and on/off current ratio (I on/off) of above 10 5. The variation of gallium metal cation has an effect on the threshold voltage (V th) and the field effect mobility (μ FE). The V th was shifted toward positive direction from - 5.2 to - 0.4 V as increasing gallium ratio, and μ FE was decreased from 2.2 × 10 - 2 to 5 × 10 - 3 cm 2/V s. These results indicated that gallium was acted as carrier suppressor by degenerating oxygen vacancy. The electrical property of GSIZO TFTs has been analyzed as a function of the gallium ratio in SIZO system, and it clearly showed that variation of gallium contents could change on the performance of TFTs.

Original languageEnglish
Pages (from-to)3774-3777
Number of pages4
JournalThin Solid Films
Volume520
Issue number10
DOIs
Publication statusPublished - 2012 Mar 1

Fingerprint

Gallium
Thin film transistors
Threshold voltage
threshold voltage
gallium
transistors
shift
thin films
Zinc Oxide
Indium
Silicon
Zinc oxide
zinc oxides
indium oxides
Oxide films
silicon
suppressors
Oxygen vacancies
oxide films
Cations

Keywords

  • Chemical deposition from solution
  • Low temperature
  • Threshold voltage
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Threshold voltage shift by controlling Ga in solution processed Si-In-Zn-O thin film transistors. / Choi, Jun Young; Kim, Sangsig; Lee, Sang Yeol.

In: Thin Solid Films, Vol. 520, No. 10, 01.03.2012, p. 3774-3777.

Research output: Contribution to journalArticle

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