Ti-Doped GaOx Resistive Switching Memory with Self-Rectifying Behavior by Using NbOx/Pt Bilayers

Ju Hyun Park, Dong Su Jeon, Tae Geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Crossbar arrays (CBAs) with resistive random access memory (ReRAM) constitute an established architecture for high-density memory. However, sneak paths via unselected cells increase the total power consumption of these devices and limit the array size. To eliminate such sneak-path problems, we propose a Ti/GaOx/NbOx/Pt structure with a self-rectifying resistive-switching (RS) behavior. In this structure, to reduce the operating voltage, we used a Ti/GaOx stack to increase the number of trap sites in the RS GaOx layer through interfacial reactions between the Ti and GaOx layers. This increase enables easier carrier transport with reduced electric fields. We then adopted a NbOx/Pt stack to add rectifying behavior to the RS GaOx layer. This behavior is a result of the large Schottky barrier height between the NbOx and Pt layers. Finally, both the Ti/GaOx and NbOx/Pt stacks were combined to realize a self-rectifying ReRAM device, which exhibited excellent performance. Characteristics of the device include a low operating voltage range (â'2.8 to 2.5 V), high on/off ratios (â1/420), high selectivity (â1/4104), high operating speeds (200-500 ns), a very low forming voltage (â1/43 V), stable operation, and excellent uniformity for high-density CBA-based ReRAM applications.

Original languageEnglish
Pages (from-to)43336-43342
Number of pages7
JournalACS Applied Materials and Interfaces
Volume9
Issue number49
DOIs
Publication statusPublished - 2017 Dec 13

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Data storage equipment
Electric potential
Carrier transport
Surface chemistry
Electric power utilization
Electric fields

Keywords

  • crossbar array
  • resistive switching
  • Schottky emission
  • selectivity
  • self-rectifying

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Ti-Doped GaOx Resistive Switching Memory with Self-Rectifying Behavior by Using NbOx/Pt Bilayers. / Park, Ju Hyun; Jeon, Dong Su; Kim, Tae Geun.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 49, 13.12.2017, p. 43336-43342.

Research output: Contribution to journalArticle

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N2 - Crossbar arrays (CBAs) with resistive random access memory (ReRAM) constitute an established architecture for high-density memory. However, sneak paths via unselected cells increase the total power consumption of these devices and limit the array size. To eliminate such sneak-path problems, we propose a Ti/GaOx/NbOx/Pt structure with a self-rectifying resistive-switching (RS) behavior. In this structure, to reduce the operating voltage, we used a Ti/GaOx stack to increase the number of trap sites in the RS GaOx layer through interfacial reactions between the Ti and GaOx layers. This increase enables easier carrier transport with reduced electric fields. We then adopted a NbOx/Pt stack to add rectifying behavior to the RS GaOx layer. This behavior is a result of the large Schottky barrier height between the NbOx and Pt layers. Finally, both the Ti/GaOx and NbOx/Pt stacks were combined to realize a self-rectifying ReRAM device, which exhibited excellent performance. Characteristics of the device include a low operating voltage range (â'2.8 to 2.5 V), high on/off ratios (â1/420), high selectivity (â1/4104), high operating speeds (200-500 ns), a very low forming voltage (â1/43 V), stable operation, and excellent uniformity for high-density CBA-based ReRAM applications.

AB - Crossbar arrays (CBAs) with resistive random access memory (ReRAM) constitute an established architecture for high-density memory. However, sneak paths via unselected cells increase the total power consumption of these devices and limit the array size. To eliminate such sneak-path problems, we propose a Ti/GaOx/NbOx/Pt structure with a self-rectifying resistive-switching (RS) behavior. In this structure, to reduce the operating voltage, we used a Ti/GaOx stack to increase the number of trap sites in the RS GaOx layer through interfacial reactions between the Ti and GaOx layers. This increase enables easier carrier transport with reduced electric fields. We then adopted a NbOx/Pt stack to add rectifying behavior to the RS GaOx layer. This behavior is a result of the large Schottky barrier height between the NbOx and Pt layers. Finally, both the Ti/GaOx and NbOx/Pt stacks were combined to realize a self-rectifying ReRAM device, which exhibited excellent performance. Characteristics of the device include a low operating voltage range (â'2.8 to 2.5 V), high on/off ratios (â1/420), high selectivity (â1/4104), high operating speeds (200-500 ns), a very low forming voltage (â1/43 V), stable operation, and excellent uniformity for high-density CBA-based ReRAM applications.

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