Time-resolved differential reflection measurements on Ga 1-xMn xAs

Shin Kim, Eunsoon Oh, J. U. Lee, D. S. Kim, Sang Hoon Lee, J. K. Furdyna

Research output: Contribution to journalArticle

3 Citations (Scopus)


We measured the time-resolved differential reflectivity, ΔR, of Ga 1-xMn xAs for x ≤ 0.05 for various excitation wavelengths and compared with the signals from semi-insulating GaAs substrates. The sign of ΔR from Ga 1-xMn xAs (x = 0.015 and x = 0.03) was negative at 295 K for photon energies larger than bandgap, which was ascribed to defect-induced absorption or a reduction of exciton bleaching. We also discuss the screening of Mn alloy potential fluctuations by photocarriers in the time-resolved differential reflection of Ga 1-xMn xAs.

Original languageEnglish
Pages (from-to)1611-1614
Number of pages4
JournalJournal of the Korean Physical Society
Issue number4
Publication statusPublished - 2006 Oct 1


  • GaMnAs
  • Pump-probe
  • Time-resolved reflectivity

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Kim, S., Oh, E., Lee, J. U., Kim, D. S., Lee, S. H., & Furdyna, J. K. (2006). Time-resolved differential reflection measurements on Ga 1-xMn xAs. Journal of the Korean Physical Society, 49(4), 1611-1614.