We measured the time-resolved differential reflectivity, ΔR, of Ga 1-xMn xAs for x ≤ 0.05 for various excitation wavelengths and compared with the signals from semi-insulating GaAs substrates. The sign of ΔR from Ga 1-xMn xAs (x = 0.015 and x = 0.03) was negative at 295 K for photon energies larger than bandgap, which was ascribed to defect-induced absorption or a reduction of exciton bleaching. We also discuss the screening of Mn alloy potential fluctuations by photocarriers in the time-resolved differential reflection of Ga 1-xMn xAs.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2006 Oct 1|
- Time-resolved reflectivity
ASJC Scopus subject areas
- Physics and Astronomy(all)