We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As +-ion implanted GaAs. Our results suggest that arsenic antisites (As Ga) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.
|Title of host publication||Physica Status Solidi C: Conferences|
|Number of pages||4|
|Publication status||Published - 2005|
ASJC Scopus subject areas
- Condensed Matter Physics