Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

Shin Kim, Eunsoon Oh, J. U. Lee, D. S. Kim, S. Lee, J. K. Furdyna

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As+-ion implanted GaAs. Our results suggest that arsenic antisites (AsGa) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.

Original languageEnglish
Pages (from-to)3141-3144
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number8
DOIs
Publication statusPublished - 2005

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy'. Together they form a unique fingerprint.

  • Cite this