Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

Shin Kim, Eunsoon Oh, J. U. Lee, D. S. Kim, Sang Hoon Lee, J. K. Furdyna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As +-ion implanted GaAs. Our results suggest that arsenic antisites (As Ga) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages3141-3144
Number of pages4
Volume2
Edition8
DOIs
Publication statusPublished - 2005

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Kim, S., Oh, E., Lee, J. U., Kim, D. S., Lee, S. H., & Furdyna, J. K. (2005). Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy. In Physica Status Solidi C: Conferences (8 ed., Vol. 2, pp. 3141-3144) https://doi.org/10.1002/pssc.200460734