Tin-doped indium oxide (ITO) film deposition by ion beam sputtering

Younggun Han, Donghwan Kim, Jun Sik Cho, Seok Keun Koh, Yo Seung Song

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5 × 10 -4 Ω cm on the films deposited by 1.3 keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate.

Original languageEnglish
Pages (from-to)211-218
Number of pages8
JournalSolar Energy Materials and Solar Cells
Volume65
Issue number1
DOIs
Publication statusPublished - 2001 Jan 1

Fingerprint

Tin
Tin oxides
Indium
Ion beams
Oxide films
Sputtering
Oxides
Substrates
Gases
Ions
Oxygen
Glass
Thin films
Wavelength
Temperature
Microstructure
indium tin oxide
indium oxide

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Tin-doped indium oxide (ITO) film deposition by ion beam sputtering. / Han, Younggun; Kim, Donghwan; Cho, Jun Sik; Koh, Seok Keun; Song, Yo Seung.

In: Solar Energy Materials and Solar Cells, Vol. 65, No. 1, 01.01.2001, p. 211-218.

Research output: Contribution to journalArticle

Han, Younggun ; Kim, Donghwan ; Cho, Jun Sik ; Koh, Seok Keun ; Song, Yo Seung. / Tin-doped indium oxide (ITO) film deposition by ion beam sputtering. In: Solar Energy Materials and Solar Cells. 2001 ; Vol. 65, No. 1. pp. 211-218.
@article{f5d27d6a4e8946e2ad63a09a51f0fdc0,
title = "Tin-doped indium oxide (ITO) film deposition by ion beam sputtering",
abstract = "Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5 × 10 -4 Ω cm on the films deposited by 1.3 keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80{\%} of transmittance in the visible wavelength including that of the glass substrate.",
author = "Younggun Han and Donghwan Kim and Cho, {Jun Sik} and Koh, {Seok Keun} and Song, {Yo Seung}",
year = "2001",
month = "1",
day = "1",
doi = "10.1016/S0927-0248(00)00097-0",
language = "English",
volume = "65",
pages = "211--218",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Tin-doped indium oxide (ITO) film deposition by ion beam sputtering

AU - Han, Younggun

AU - Kim, Donghwan

AU - Cho, Jun Sik

AU - Koh, Seok Keun

AU - Song, Yo Seung

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5 × 10 -4 Ω cm on the films deposited by 1.3 keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate.

AB - Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5 × 10 -4 Ω cm on the films deposited by 1.3 keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate.

UR - http://www.scopus.com/inward/record.url?scp=0035199554&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035199554&partnerID=8YFLogxK

U2 - 10.1016/S0927-0248(00)00097-0

DO - 10.1016/S0927-0248(00)00097-0

M3 - Article

AN - SCOPUS:0035199554

VL - 65

SP - 211

EP - 218

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

IS - 1

ER -