Tin-doped indium oxide (ITO) film deposition by ion beam sputtering

Younggun Han; Donghwan Kim; Jun Sik Cho; Seok Keun Koh; Yo Seung Song

doi:10.1016/S0927-0248(00)00097-0

Tin-doped indium oxide (ITO) film deposition by ion beam sputtering

Younggun Han, Donghwan Kim, Jun Sik Cho, Seok Keun Koh, Yo Seung Song

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5 × 10^-4 Ω cm on the films deposited by 1.3 keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate.

Original language	English
Article number	28
Pages (from-to)	211-218
Number of pages	8
Journal	Solar Energy Materials and Solar Cells
Volume	65
Issue number	1
DOIs	https://doi.org/10.1016/S0927-0248(00)00097-0
Publication status	Published - 2001 Jan

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/S0927-0248(00)00097-0

Cite this

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title = "Tin-doped indium oxide (ITO) film deposition by ion beam sputtering",

abstract = "Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5 × 10-4 Ω cm on the films deposited by 1.3 keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate.",

author = "Younggun Han and Donghwan Kim and Cho, {Jun Sik} and Koh, {Seok Keun} and Song, {Yo Seung}",

note = "Funding Information: This work was supported by grant No. 981-0805-026-2 from the Basic Research Program of the Korean Science and Engineering Foundation.",

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doi = "10.1016/S0927-0248(00)00097-0",

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T1 - Tin-doped indium oxide (ITO) film deposition by ion beam sputtering

AU - Han, Younggun

AU - Kim, Donghwan

AU - Cho, Jun Sik

AU - Koh, Seok Keun

AU - Song, Yo Seung

N1 - Funding Information: This work was supported by grant No. 981-0805-026-2 from the Basic Research Program of the Korean Science and Engineering Foundation.

PY - 2001/1

Y1 - 2001/1

N2 - Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5 × 10-4 Ω cm on the films deposited by 1.3 keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate.

AB - Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5 × 10-4 Ω cm on the films deposited by 1.3 keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate.

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Tin-doped indium oxide (ITO) film deposition by ion beam sputtering

Abstract

ASJC Scopus subject areas

UN SDGs

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