Tin-doped indium oxide (ITO) film deposition by ion beam sputtering

Younggun Han, Donghwan Kim, Jun Sik Cho, Seok Keun Koh, Yo Seung Song

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5 × 10-4 Ω cm on the films deposited by 1.3 keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate.

Original languageEnglish
Article number28
Pages (from-to)211-218
Number of pages8
JournalSolar Energy Materials and Solar Cells
Volume65
Issue number1
DOIs
Publication statusPublished - 2001 Jan

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Tin-doped indium oxide (ITO) film deposition by ion beam sputtering'. Together they form a unique fingerprint.

Cite this