TiN/Al Ohmic contacts to N-face n -type GaN for high-performance vertical light-emitting diodes

Joon Woo Jeon, Tae Yeon Seong, Hyunsoo Kim, Kyung Kook Kim

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

We report on the electrical properties of TiN(30 nm)/Al(200 nm) Ohmic contacts to N-face n -type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Both the as-deposited samples show Ohmic behaviors with contact resistivity of (6.0-7.2) × 10-4 ∑ cm2. However, annealing the samples at 300 °C causes the degradation of their electrical properties. Furthermore, unlike the TiN/Al contacts, the Ti/Al contacts suffer from aging degradation when exposed to air. Based on the x-ray photoemission spectroscopy and secondary ion mass spectrometry results, Ohmic formation and degradation mechanisms are briefly described and discussed.

Original languageEnglish
Article number042102
JournalApplied Physics Letters
Volume94
Issue number4
DOIs
Publication statusPublished - 2009 Feb 9

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electric contacts
light emitting diodes
degradation
electrical properties
secondary ion mass spectrometry
photoelectric emission
electrical resistivity
annealing
causes
air
spectroscopy
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

TiN/Al Ohmic contacts to N-face n -type GaN for high-performance vertical light-emitting diodes. / Jeon, Joon Woo; Seong, Tae Yeon; Kim, Hyunsoo; Kim, Kyung Kook.

In: Applied Physics Letters, Vol. 94, No. 4, 042102, 09.02.2009.

Research output: Contribution to journalArticle

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