Titanium-substituted Bi1.5Zn1.0Nb1.5O 7 for high-density and low-temperature-coefficient-of-capacitance MIM capacitor by low-temperature process (300 °c)

Kwang Hwan Cho, Min Gyu Kang, Chong-Yun Kang, Seok Jin Yoon, Youngpak Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A high-density metalinsulatormetal (MIM) capacitor at 300 °C with a titanium-substituted Bi1.5ZnNb1.5O7 (BZN) dielectric prepared by physical vapor deposition is presented for the first time. Improvements have been achieved in terms of both capacitance density and temperature coefficient of capacitance (TCC) for MIM capacitors. A 67-nm-thick (Bi1.5Zn0.5)(Zn0.4Nb1.3Ti 0.3O7) film has exhibited a high capacitance density of 14.8 fF/cm2 at 100 kHz. The leakage current density is low, which is approximately 7.69 nA/cm2 at 1 V. The values of linear voltage and TCC are approximately 156 ppm/V2 and 98 ppm/°C at 100 kHz, respectively. All these make the Ti-substituted BZN capacitor very suitable for use in silicon RF and mixed-signal IC applications.

Original languageEnglish
Article number5446363
Pages (from-to)473-475
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number5
DOIs
Publication statusPublished - 2010 May 1

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Titanium
Capacitors
Capacitance
Temperature
Physical vapor deposition
Silicon
Leakage currents
Current density
Electric potential

Keywords

  • Capacitance density
  • Metal-insulator-metal (MIM) capacitor
  • Temperature coefficient of capacitance (TCC)
  • Ti-substituted BiZnNbO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Titanium-substituted Bi1.5Zn1.0Nb1.5O 7 for high-density and low-temperature-coefficient-of-capacitance MIM capacitor by low-temperature process (300 °c). / Cho, Kwang Hwan; Kang, Min Gyu; Kang, Chong-Yun; Yoon, Seok Jin; Lee, Youngpak.

In: IEEE Electron Device Letters, Vol. 31, No. 5, 5446363, 01.05.2010, p. 473-475.

Research output: Contribution to journalArticle

Cho, Kwang Hwan ; Kang, Min Gyu ; Kang, Chong-Yun ; Yoon, Seok Jin ; Lee, Youngpak. / Titanium-substituted Bi1.5Zn1.0Nb1.5O 7 for high-density and low-temperature-coefficient-of-capacitance MIM capacitor by low-temperature process (300 °c). In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 5. pp. 473-475.
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abstract = "A high-density metalinsulatormetal (MIM) capacitor at 300 °C with a titanium-substituted Bi1.5ZnNb1.5O7 (BZN) dielectric prepared by physical vapor deposition is presented for the first time. Improvements have been achieved in terms of both capacitance density and temperature coefficient of capacitance (TCC) for MIM capacitors. A 67-nm-thick (Bi1.5Zn0.5)(Zn0.4Nb1.3Ti 0.3O7) film has exhibited a high capacitance density of 14.8 fF/cm2 at 100 kHz. The leakage current density is low, which is approximately 7.69 nA/cm2 at 1 V. The values of linear voltage and TCC are approximately 156 ppm/V2 and 98 ppm/°C at 100 kHz, respectively. All these make the Ti-substituted BZN capacitor very suitable for use in silicon RF and mixed-signal IC applications.",
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AU - Kang, Min Gyu

AU - Kang, Chong-Yun

AU - Yoon, Seok Jin

AU - Lee, Youngpak

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AB - A high-density metalinsulatormetal (MIM) capacitor at 300 °C with a titanium-substituted Bi1.5ZnNb1.5O7 (BZN) dielectric prepared by physical vapor deposition is presented for the first time. Improvements have been achieved in terms of both capacitance density and temperature coefficient of capacitance (TCC) for MIM capacitors. A 67-nm-thick (Bi1.5Zn0.5)(Zn0.4Nb1.3Ti 0.3O7) film has exhibited a high capacitance density of 14.8 fF/cm2 at 100 kHz. The leakage current density is low, which is approximately 7.69 nA/cm2 at 1 V. The values of linear voltage and TCC are approximately 156 ppm/V2 and 98 ppm/°C at 100 kHz, respectively. All these make the Ti-substituted BZN capacitor very suitable for use in silicon RF and mixed-signal IC applications.

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KW - Temperature coefficient of capacitance (TCC)

KW - Ti-substituted BiZnNbO

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