Top-gate staggered poly(3,3‴-dialkyl-quarterthiophene) organic thin-film transistors with reverse-offset-printed silver source/drain electrodes

Minseok Kim, Jae Bon Koo, Kang Jun Baeg, Soon Won Jung, Byeong Kwon Ju, In Kyu You

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Here, we report on high-performance top-gated poly(3,3‴-dialkyl- quarterthiophene) (PQT-12) organic thin-film transistors (OTFTs) with reverse-offset-printed (ROP) silver (Ag) source/drain (S/D) electrodes. OTFT devices with ROP S/D electrodes using Ag nanopaste show higher performance (∼0.01cm2/Vs) than those fabricated by vacuum electron beam evaporation with conventional photolithography and a standard lift-off process (∼1×10-3cm2/Vs). This dissimilarity is attributed to the higher work function (-4.9eV) of the ROP Ag electrode due to AgO formation on the Ag surface during thermal annealing. This results in a low interfacial hole injection energy barrier between the S/D electrodes and the PQT-12 semiconductor.

Original languageEnglish
Article number133306
JournalApplied Physics Letters
Volume101
Issue number13
DOIs
Publication statusPublished - 2012 Sep 24

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transistors
silver
electrodes
thin films
photolithography
evaporation
electron beams
injection
vacuum
annealing
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Top-gate staggered poly(3,3‴-dialkyl-quarterthiophene) organic thin-film transistors with reverse-offset-printed silver source/drain electrodes. / Kim, Minseok; Koo, Jae Bon; Baeg, Kang Jun; Jung, Soon Won; Ju, Byeong Kwon; You, In Kyu.

In: Applied Physics Letters, Vol. 101, No. 13, 133306, 24.09.2012.

Research output: Contribution to journalArticle

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