Top-gated field-effect transistor and rectifying diode operation of core-shell structured GaP nanowire devices

Byoung Kye Kim, Ju Jin Kim, Jeong O. Lee, Ki Jeong Kong, Han Jong Seo, Cheol Jin Lee

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We have fabricated top-gated GaP nanowire field-effect transistors using core-shell structured GaP nanowires grown by a chemical vapor deposition method. As expected, based on results of a thin Ga2 O3 shell serving as a gate oxide, our top-gated GaP nanowire FETs exhibited more effective gate-channel coupling when compared to the conventional back-gated one. Above the threshold voltage of 1.5 V, diode like I-V characteristics were observed between the source and top-gate electrode. This can be explained by the formation of a midgap GaP/wide-gap Ga2 O3 heterojunction. Measured current from in between the source and top gate shows extreme sensitivity toward ultraviolet illumination, which can be attributed to the electron-hole pair generation in the Ga2 O3 layer. The first-principle electronic structure calculations on Ga2 O3 crystal revealed a reduction in the band gap (4.8 eV→3.8 eV) due to the development of oxygen vacancy states in the forbidden band gap.

Original languageEnglish
Article number153313
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number15
Publication statusPublished - 2005 Dec 14
Externally publishedYes


ASJC Scopus subject areas

  • Condensed Matter Physics

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