Abstract
We have investigated topological confinement effects of electron-electron interactions on gapless edge states in zigzag-edge bilayer graphene nanoribbons under a voltage bias between the layers by using a tight-binding model with on-site Coulomb interactions. Spin-dependent potentials at the four edge sites resulting from the electron-electron interactions not only determine the spin configurations but also can result in topological confinement effects. In the magnetic phases with interlayer antiferromagnetic spin configurations, the edge potentials do not produce gapless edge states, and only gapless edge states can exist due to the edge shape. In the magnetic phases with interlayer ferromagnetic spin configurations, various gapless edge states due to the edge potential and edge shape are produced. Gapless edge states corresponding to the quantum spin-valley Hall phase and the layered antiferromagnetic phase can be described by topological confinement effects alone. The half-metallic quantum valley Hall phase can be described by topological confinement effects at inequivalent edge sites.
| Original language | English |
|---|---|
| Article number | 115106 |
| Journal | Physical Review B |
| Volume | 97 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2018 Mar 2 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Topological confinement effects of electron-electron interactions in biased zigzag-edge bilayer graphene nanoribbons. / Lee, Kyu Won; Lee, Cheol Eui.
In: Physical Review B, Vol. 97, No. 11, 115106, 02.03.2018.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Topological confinement effects of electron-electron interactions in biased zigzag-edge bilayer graphene nanoribbons
AU - Lee, Kyu Won
AU - Lee, Cheol Eui
PY - 2018/3/2
Y1 - 2018/3/2
N2 - We have investigated topological confinement effects of electron-electron interactions on gapless edge states in zigzag-edge bilayer graphene nanoribbons under a voltage bias between the layers by using a tight-binding model with on-site Coulomb interactions. Spin-dependent potentials at the four edge sites resulting from the electron-electron interactions not only determine the spin configurations but also can result in topological confinement effects. In the magnetic phases with interlayer antiferromagnetic spin configurations, the edge potentials do not produce gapless edge states, and only gapless edge states can exist due to the edge shape. In the magnetic phases with interlayer ferromagnetic spin configurations, various gapless edge states due to the edge potential and edge shape are produced. Gapless edge states corresponding to the quantum spin-valley Hall phase and the layered antiferromagnetic phase can be described by topological confinement effects alone. The half-metallic quantum valley Hall phase can be described by topological confinement effects at inequivalent edge sites.
AB - We have investigated topological confinement effects of electron-electron interactions on gapless edge states in zigzag-edge bilayer graphene nanoribbons under a voltage bias between the layers by using a tight-binding model with on-site Coulomb interactions. Spin-dependent potentials at the four edge sites resulting from the electron-electron interactions not only determine the spin configurations but also can result in topological confinement effects. In the magnetic phases with interlayer antiferromagnetic spin configurations, the edge potentials do not produce gapless edge states, and only gapless edge states can exist due to the edge shape. In the magnetic phases with interlayer ferromagnetic spin configurations, various gapless edge states due to the edge potential and edge shape are produced. Gapless edge states corresponding to the quantum spin-valley Hall phase and the layered antiferromagnetic phase can be described by topological confinement effects alone. The half-metallic quantum valley Hall phase can be described by topological confinement effects at inequivalent edge sites.
UR - http://www.scopus.com/inward/record.url?scp=85043997741&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85043997741&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.97.115106
DO - 10.1103/PhysRevB.97.115106
M3 - Article
AN - SCOPUS:85043997741
VL - 97
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 11
M1 - 115106
ER -